Murata Manufacturing Co., Ltd.

Yasuhiko Hirano

Daisuke Sekiya

Tsutomu Ieki

Hiroaki Tanaka

Takashi Yamane

Taku Kikuchi

Katsuhiro Ikada

Hiroshi Tanaka

A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode on the substrate, a cover over the substrate and IDT electrode, and hollow spaces between the IDT electrode and the cover. The hollow spaces are defined by partition supports between the substrate and the cover. The partition supports include a first and second partition supports extending in a first direction without contacting each other. The first and second partition supports each include first and second ends along the first direction. The first and second direction perpendicular to the first direction. The first end of the first partition support is closer to an outer periphery of the substrate than is the second end, and the first end of the second partition support is farther away from the outer periphery than is the second end.

Surface acoustic wave device

A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer electrode that is disposed on a main surface of the piezoelectric substrate, a plurality of partition-support layers each of which is arranged in a region of the main surface surrounded by an outer periphery of the main surface, and a cover layer that is disposed above the plurality of partition-support layers and that covers the interdigital transducer electrode. The plurality of partition-support layers include a first partition-support layer and a second partition-support layer that are adjacent to each other, and a portion of the first partition-support layer and a portion of the second partition-support layer do not overlap each other when viewed from a second direction perpendicular or substantially perpendicular to a first direction in which the plurality of partition-support layers extend.

An acoustic wave device includes a piezoelectric substrate, an IDT electrode and an electrode pad provided on a front surface of the piezoelectric substrate, a support layer provided on the front surface so as to surround the IDT electrode, a first cover layer and a second cover layer provided on the support layer such that the first cover layer, the second cover layer, the support layer, and the piezoelectric substrate seal the IDT electrode in a hollow space, a UBM portion joined to the electrode pad, and a bump joined to the UBM portion. A joint surface of the UBM portion at which the UBM portion is joined to the bump has a spherical shape or substantially spherical shape that is convex towards the bump side.

Acoustic wave device

An elastic wave device includes an elastic wave element that includes first support layers provided on a piezoelectric substrate, a second support layer provided on the piezoelectric substrate so as to surround the first support layers when viewed in a plan view, and a cover member provided on the first support layers and the second support layer, a mounting substrate on which the elastic wave element is mounted, and a mold resin provided on the mounting substrate and sealing the elastic wave element. A thickness of each of the first support layers is less than a thickness of the second support layer. The cover member convexly curves towards the piezoelectric substrate so as to be spaced away from the mounting substrate. A space between the mounting substrate and the cover member is filled with the mold resin.

Elastic wave device, communication module apparatus, and method for manufacturing elastic wave device

A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, support layers, and a cover layer. A distance from a first end of a first partition-support layer to one of the outer-periphery-frame support layers closest to the first end is smaller than a distance from a second end of the first partition-support layer to one of the outer-periphery-frame support layers closest to the second end, and a distance from a first end of a second partition-support layer to one of the outer-periphery-frame support layers closest to the first end is larger than a distance from a second end of the second partition-support layer to one of the outer-periphery-frame support layers closest to the second end.

A circuit module includes a duplexer and a circuit substrate. A first signal path connects a first external electrode to a second external electrode. A second signal path connects a third external electrode to a fourth external electrode. A third signal path connects a fifth external electrode to a sixth external electrode. A first ground path connects a seventh external electrode to an eighth external electrode. A second ground path is connected to a ninth external electrode and is capacitively coupled to the second signal path.

Circuit module including a duplexer mounted on a circuit substrate having a specified second ground path

An oscillator module in which external wires can be reduced, and characteristics of a resonator and oscillation margin can be measured. A circuit portion for oscillation and a two-port surface acoustic wave resonator are sealed in a package, one of the terminals of the two-port surface acoustic wave resonator is connected inside the package to an input terminal of the circuit portion for oscillation. The number of external terminals provided at the package is reduced, enabling the oscillator module to be made small-scale and at lower cost. Furthermore, it is possible to measure the insertion loss and resonant frequency of the two-port surface acoustic wave resonator, and the oscillation margin of the oscillator module, making it possible to improve the yield of the oscillator and reduce costs.

Oscillator module and communications device using the same

An FSK modulator including an amplifier for oscillation has a surface acoustic wave resonator connected in series with a switching circuit formed without a variable-capacity diode but including a semiconductor switch and one or more fixed-capacity capacitors. When an input signal is received, the switch causes a capacitor or combination of capacitors to become connected in series with the surface acoustic wave resonator, providing oscillations with two frequencies to effect FSK modulation.

Growing community of inventors

Nagaokakyo, Japan

Yasuhiko Hirano