Matsushita Electric Industrial Co., Ltd.

Yasuhiko Fukuda

Kenichi Koya

Tomio Inoue

Kenichi Sanada

A GaN-based LED element having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element formed in a silicon substrate. Electrical connections are provided via Au microbumps and between a p-side electrode of the GaN-based LED element and an n-side electrode of the Si diode element and between an n-side electrode of the GaN-based LED element and a p-side electrode of the Si diode element The Si diode element functions to protect the LED element from an electrostatic destruction. The Si diode element has a backside electrode connected to a leadframe . The p-side electrode of the Si diode element has a bonding pad portion connected to a leadframe via an Au wire

Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor

Semiconductor light-emitting device comprising an electrostatic protection element

A GaN-based LED element,having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element,formed in a silicon substrate. Electrical connections are provided via Au microbumps,and,between a p-side electrode,of the GaN-based LED element,and an n-side electrode,of the Si diode element,and between an n-side electrode,of the GaN-based LED element,and a p-side electrode,of the Si diode element,. The Si diode element,functions to protect the LED element,from an electrostatic destruction. The Si diode element,has a backside electrode,connected to a leadframe,. The p-side electrode,of the Si diode element,has a bonding pad portion,connected to a leadframe,via an Au wire

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Hioki-gun, Japan

Yasuhiko Fukuda