Kabushiki Kaisha Toshiba

Toshiba Lighting & Technology Corporation

Yasuhide Okada

Yoshiaki Sugizaki

Akihiro Kojima

Yosuke Akimoto

Hiroshi Koizumi

Tomomichi Naka

Kazuhito Higuchi

Susumu Obata

Kazuo Shimokawa

Makoto Sakai

Naoaki Sakurai

Izuru Komatsu

Daigo Suzuki

Kazuki Tateyama

Michinobu Inoue

Takumi Suwa

Masahiro Uekita

Shinji Nakata

Miyuki Izuka

Kumiko Ioka

According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

Semiconductor light emitting device and method for manufacturing the same

According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Optical semiconductor device and method for manufacturing same

A luminaire according to embodiments includes a body portion, a light source provided at one end portion of the body portion and having a light-emitting element, a globe provided so as to cover the light source, and a thermal transfer portion thermally joined to at least either one of the globe or a thermal radiating surface of the body portion on the end portion side. Then, an end surface of the thermal transfer portion on the side of the globe is exposed from the globe.

Luminaire

According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

Method for manufacturing semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

Semiconductor light emitting device

Growing community of inventors

Kanagawa-ken, Japan

Yasuhide Okada