Nippon Steel Corporation

Other

Shinko Seiki Company, Limited

Yasuhide Ohno

Tomohiro Uno

Tadakatsu Maruyama

Hiroaki Otsuka

Osamu Kitamura

Yasuhiro Suzuki

Yoshio Ohzeki

Tosiharu Kikuchi

Tatsuya Takeuchi

Masashi Konda

Hiroo Suzuki

Kou Miyamura

Keisuke Taniguchi

Taizo Hagihara

Hisao Kuribayashi

Koichi Yamamoto

To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles. An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes () and bump electrodes () on the lead-out electrodes () of a semiconductor chip () and surfaces of lead-out electrodes () of an intermediate substrate (), and, after that, the bump electrodes () of the semiconductor chip () and the lead-out electrodes () of the intermediate substrate () are aligned with each other. After that, a pressure is applied to bond the bump electrodes () and the lead-out electrodes ().

Bonding method and bonding apparatus

A method of producing soft fine metal spheres for semiconductor packaging from a material selected from soft metals and soft alloys. A plurality of fine wires made of the material are arranged in parallel on a flat base plate. Each of the wires has a diameter of not more than 100 .mu.m. The fine wires are cut into wire chips having an equal mass relative to each other and a chip length/chip diameter ratio between 5 and 100 by utilizing a cutting jig having cutting edges which are arranged at a constant pitch. The resulting wire chips are arranged so that the chips are spaced apart a minimum distance sufficient to prevent the chips from merging when melted. The resulting spaced-apart wire chips are heated to a temperature up to but not exceeding 100.degree. C. above the melting point thereof, thereby forming the chips into molten spheres. The resulting molten spheres are cooled, thereby forming solid spheres having a diameter within about 5% of a desired diameter.

Method of producing fine metal spheres of uniform size

This invention provides a thin gold-alloy wire for a semiconductor device capable of improving long term reliability of bonding with an electrode and capable of simultaneously accomplishing reduction of a wire bend and wire flow at the time of resin molding and high looping. The thin gold-alloy wire contains 50 to 3000 ppm by weight of Mn and the balance comprising gold and unavoidable impurities. Further, the thin gold-alloy wire comprises any of the following combinations 1, 2, 1+2, 2+3 and 1+2+3 when element groups to be added are classified into the following groups 1 to 3:

Thin gold-alloy wire for semiconductor device

This invention relates to a bonding wire (3) for connecting electrodes of a semiconductor element to outer leads (2). The bonding wire (3) consists of Cu of not less than 1 wt % but less than 5 wt %, and the balance Au and incidental impurities. The bonding wire is superior in rupture strength and bonding strength. Even if the diameter is thinned to about 10 .mu.m, high reliability may be insured for connection.

Bonding wire for semiconductor element

A composite lead frame comprising a lead frame (10), leads (28) supported on a plastic film (22 ') having a device hole (24), and a metal (14, 32) for mounting a semiconductor chip (34) is disclosed. The lead frame (10) has a plurality of inner lead portions (12) each of which is bonded to each of the leads (28), respectively. The metal (14, 32) also supports the leads (28) through the plastic film (22'). The metal (14, 32) may be bonded to the lead frame (10) through an adhesive tape (16), or may be integrated with the lead frame (10). Bonding wires (36) to connect the leads (28) and the semiconductor chip (34) can be easily and securely bonded to the leads (28) in virtue of the metal (14, 32) supporting the leads (28). Additionally, a semiconductor device incorporating the composite lead frame has efficient heat dissipation and reliability by virtue of the metal pad.

Composite lead frame and semiconductor device using the same

A method of connecting a TAB tape to a semiconductor chip is disclosed which comprises the steps of preliminarily locating and fixing bumps at positions corresponding to a pattern of electrodes of the semiconductor chip to be connected; and bonding the bumps by thermocompression to the electrodes of the semiconductor chip and the leads of the TAB tape, respectively, so that each electrode of the semiconductor chip is electrically connected to the corresponding lead of the TAB tape through a corresponding one of the bumps. Also disclosed are a bump sheet and a bumped tape to be used in a method of connecting a TAB tape to a semiconductor chip.

Method of connecting TAB tape to semiconductor chip, and bump sheet and

A method of bonding bumps to leads of a TAB tape comprises the steps of preparing a substrate which is provided with through-holes, each having a size which will not allow the bumps to pass therethrough, at positions corresponding to bonding positions of the leads of the TAB tape where the bumps are to be bonded; provisionally arranging the bumps at positions of the through-holes at one side of the substrate by reducing a pressure in another side of the substrate opposite to said one side thereof to such the bumps in said through-holes; disposing the substrate on which the bumps are provisionally arranged and said TAB tape in such a positional relationship that said bumps face to the bonding positions of the leads of said TAB tape; and bonding the provisionally arranged bumps to the leads at the bonding positions and an apparatus for arranging bumps in a positional relationship corresponding to bonding positions of leads of a TAB tape.

Method of bonding bumps to leads of tab tape and an apparatus for

Production of boron-containing steel slabs free from surface defects by continuous casting, particularly prevention of the slab surface crackings by cooling the slab with a specific cooling rate through the temperature range from the melting point to 900.degree. C. so as to prevent boron-containing compounds such as BN from precipitating along the austenite grain boundary. Great advantage over the conventional art is that boron-containing molten steels which could not be continuously cast can be successfully continuously cast into slabs free from surface defects.

Growing community of inventors

Kawasaki, Japan

Yasuhide Ohno