Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Yasuharu Shinokawa

Kazuyoshi Honda

Hiromasa Yagi

Sadayuki Okazaki

Satoshi Shibutani

Yuma Kamiyama

Noriyuki Uchida

Daisuke Suetsugu

Yuko Ogawa

Tomofumi Yanagi

Kunihiko Bessho

Noriaki Amo

A conveyance systemA of a film-forming apparatusA includes a blowing rollerhaving a function of supplying a cooling gas toward a substrate. The blowing roller has the first shelland the internal block. The first shellhas a plurality of first through holesas a gas supply channel, and is rotatable in synchronization with the substrate. The internal blockis disposed inside the first shell. A manifoldis defined by the internal blockinside the first shell. The manifoldis formed so as to introduce the gas toward the plurality of first through holeswithin the range of a holding angle. A clearancefacing the plurality of first through holesoutside the range of the holding angle is further formed inside the first shell. In the radial direction, the manifoldhas a relatively large dimension, and the clearancehas a relatively small dimension.

Thin film-manufacturing apparatus,thin film-manufacturing method,and substrate-conveying roller

Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrateis provided in a vacuum, and the cooling bodyis provided close to a film non-formation surface of the substrate. A thin film is formed by depositing a film forming material on a film formation surface of the substratewhile introducing a cooling gas into between the substrateand the cooling body. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.

Method for forming thin film while providing cooling gas to rear surface of substrate

In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500&#xb0; C. and not more than 1600&#xb0; C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.

Purifying method for metallic silicon and manufacturing method of silicon ingot

Disclosed is a moldfor forming cast rods including: a segment assemblyincluding a plurality of segmentsbeing placed side by side, and a plurality of cavitiesextending along a longitudinal direction; and clamping means (to) for clamping the segment assemblyin directions orthogonal to the longitudinal direction. The moldhas one or more cavity-forming portionseach forming a part of one of the peripheral surfaces of the cavities. Each cavityis formed by a combination of two or more segments, and at least one of the plurality of segmentshas two or more cavity-forming portions

Mold for forming cast rods, casting apparatus, and production method of cast rods

Growing community of inventors

Osaka, Japan

Yasuharu Shinokawa