Ngk Insulators, Inc.

Yasufumi Aihara

Shinji Kawasaki

Keiichiro Watanabe

Hideyoshi Tsuruta

Hiroto Matsuda

Katsuhiro Inoue

Akira Narukawa

Makoto Murai

Ikuhisa Morioka

Tsuneaki Ohashi

Kazuhiro Nobori

Tomoyuki Fujii

Shigenori Ito

Hirotake Yamada

Kiyoshi Araki

Masao Nishioka

Tetsuya Kawajiri

Keiji Kawasaki

Hiroya Sugimoto

Hiroshi Furukubo

Kazuma Ohba

Jyunya Waki

Shunsuke Tanaka

Tsutomu Kato

Syunsuke Tanaka

To form an electrostatic chuck, a bonding sheet is applied onto the upper surface of a cooling plate and then the cooling plate is placed in a vacuum dryer at a pressure of 2,000 Pa or less for a pre-bake treatment at 120&#xb0; C. to 130&#xb0; C. for 15 to 40 hours, followed by natural cooling. A plate is then stacked on the bonding sheet so that the lower surface of the plate is aligned with the upper surface of the bonding sheet, which is applied onto the cooling plate. The resulting stacked body is placed in a heat-resistant resin bag, and is then placed in an autoclave and treated together for several hours under pressure and heat.

Ceramic-metal bonded body and method of producing the same

A substrate supporting member includes: a plate-shaped ceramic body having a surface serving as a substrate supporting surface; a plate-shaped composite material body which is joined to a surface of the ceramic body opposite to the substrate supporting surface with a joint material interposed therebetween and the plate-shaped composite material body made of porous ceramic with pores filled with metal, the composite material body having a porosity of more than 0% and not more than 5%; and a metallic plate which is joined to a surface of the composite material body opposite to the surface joined to the ceramic body with a joint material interposed therebetween.

Substrate supporting member

A heating device has a ceramic base with a heating surface, and a heating body embedded in the ceramic base. The heating device includes a thermal conductive member positioned between the heating surface and the heating body in the ceramic base. The thermal conductive member has a thermal conductivity that is higher than the ceramic base and as such, the heating device achieves superior temperature uniformity of a heated object particularly in a semiconductor device manufacturing process.

Heating device

A ceramic member is provided including a base including an alumina sintered body, an yttria sintered body formed on the alumina sintered body, an intermediate layer including yttrium and aluminum formed between the alumina sintered body and the yttria sintered body, and a metallic member buried in the intermediate layer of the base. A difference between the thermal expansion coefficient of the alumina sintered body and that of the yttria sintered body is equal to or less than about 0.50&#xd7;10/K, and the thermal expansion coefficient of the alumina sintered body is greater than the thermal expansion coefficient of the yttria sintered body. The alumina sintered body, the intermediate layer, the yttria sintered body, and the metallic member are formed into an integrated sintered body, and the content of yttria in the yttria sintered body is 99 wt % or more.

Ceramic member and manufacturing method for the same

An electrostatic chuck includes a ceramic base having an electrode embedded in vicinity to a holding face for holding a substrate. On a back side of this ceramic base, provided are a terminal connected to the electrode, a wafer temperature control member, and an insulating member for insulating the temperature control member from the terminal. This insulating member has a flange portion on its end portion in contact with the ceramic base, and is made of highly thermal conductive ceramics.

Electrostatic chuck

A yttria sintered body contains an amount of silicon carbide within a range of 5 to 40% by volume, has a volume resistivity at room temperature within a range of 1&#xd7;10to 1&#xd7;10&#x3a9;&#xb7;cm, and is adapted for application to an electrostatic chuck.

Yttria sintered body, electrostatic chuck, and manufacturing method of yttria sintered body

An electrostatic chuck includes; a base made of ceramics, in which an electrode generating electrostatic attractive force is embedded; a cooling member which contains metal; a bonding material which bonds the base and the cooling member to each other; a gas providing passage which penetrates the base, the bonding material, and the cooling member; and an engagement member and a bolt member, which are fixing members mechanically fixing the base and the cooling member to each other.

A yttria sintered body is provided which includes yttria as a principal ingredient and 5 to 40 vol. % silicon nitride, and which exhibits enhanced corrosion resistance and mechanical strength.

Yttria sintered body, ceramic member using yttria sintered body, and manufacturing method of yttria sintered body

An anti-corrosion ceramic member having a substrate made of a ceramic material, a surface layer made of a fluoride and formed on the substrate, and an intermediate layer formed between the substrate and the surface layer and having the ceramic material of the substrate and the fluoride.

Anti-corrosion ceramic member

A base member made of a metal in which aluminum is included, ceramics in which an aluminum element is included, or a composition member constructed by a metal in which aluminum and ceramics are included, is provided in a container in which a solid fluorine compound such as NaHF is filled. Then, the container is heated at a temperature higher than a decomposition temperature of the solid fluorine compound. After that, the base member is subjected to a heat treatment with the decomposed gas of the solid fluorine compound to form a fluoride layer on a surface of the base member. In this manner, it is possible to obtain an anti-corrosion member which shows a high corrosion property with respect to the corrosion gas of halogen series and its plasma, particularly with respect to chlorine gas and its plasma.

Method of producing anti-corrosion member and anti-corrosion member

A method for producing a silicon carbide body, includes the steps of forming a silicon carbide mass by chemical vapor deposition, and thermally treating the silicon carbide mass under vacuum or in an inert gas atmosphere at a temperature not less than 2000&deg; C., the silicon carbide article having an electric resistivity higher than that of the silicon carbide mass having not been thermally treated.

Production of silicon carbide bodies

A sintered ceramic part to be exposed to a corrosive gas, a surface of said ceramic part being machined, wherein each of grains exposed to the machined surface of the ceramic part is formed with a machined surface, and en edge of the machined surface of each of these grains is made round by material transfer. A process for producing such a sintered ceramic part includes the steps of: obtaining a machined body having a given shape by at least grinding a surface of a ceramic sintered body, and annealing the machined body.

Ceramic parts and a producing process thereof

A process is disclosed for producing a corrosion-resistant ceramic member, which process includes the steps of preparing a sintered body made of a ceramic material containing at least aluminum, immersing the ceramic sintered body in hydrofluoric acid, and forming a film of aluminum fluoride at a surface layer portion of the ceramic sintered body by heating the ceramic sintered body.

Production of corrosion-resistant ceramic members

A silicon nitride sintered material includes silicon nitride and rare earth element compounds. Y and Yb are contained as the rare earth elements in a total amount of 5-7 mole % in terms of oxides, Yb/Y is 4/6 to 9/1 in terms of molar ratio of oxides, and the crystal phases of grain boundary contain a H phase and a J phase with the proportion of the H phase being larger than that of the J phase. A process for producing a silicon nitride sintered material includes the steps of mixing a Si.sub.3 N.sub.4 powder with Y.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 both as a sintering aid, the total amount of Y.sub.2 O.sub.3 and Yb.sub.2 O.sub.3 being 5-7 mole % and the molar ratio of Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 being 4/6 to 9/1, molding the resulting mixture, sintering the molded material in a nitrogen atmosphere at 1,850-1,950.degree. C., and heat-treating the sintered material in air at 1,000-1,500.degree. C. for 0.5-10 hours. The silicon nitride sintered material has, in a small or large thickness, oxidation resistance and strength at low temperatures while retaining high strength at high temperatures.

Process for production of silicon nitride material

A gas-tight article includes a sintered body composed mainly of a silicon carbide, and a film of silicon carbide formed on a surface of the sintered body by chemical vapor deposition and covering said surface of the sintered body, wherein cracks are formed in the film of the silicon carbide, and the cracks are filled with metallic silicon.

Growing community of inventors

Nagoya, Japan

Yasufumi Aihara