Renesas Electronics Corporation

Nec Corporation

Yasuaki Ozaki

Kaoru Mori

Kiyokazu Nagahara

Tetsuhiro Suzuki

Norikazu Ohshima

Hironobu Tanigawa

Eiji Kariyada

Katsumi Suemitsu

Hiroaki Honjyou

A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

A magnetoresistive element includes: a lower magnetic layer; a barrier layer; and an upper magnetic layer. The barrier layer is provided on the lower magnetic layer. The upper magnetic layer is provided on the barrier layer. One of magnetization directions of the lower magnetic layer and the upper magnetic layer is fixed. The barrier layer has a first surface which includes a surface contacted with an upper surface of the lower magnetic layer. The upper magnetic layer has a second surface which includes a surface contacted with an upper surface of the barrier layer. Each of the first surface and the second surface is larger than the upper surface of the lower magnetic layer in area.

Magnetoresistive element, magnetic random access memory and method of manufacturing the same

Growing community of inventors

Kanagawa, Japan

Yasuaki Ozaki