Fuji Xerox Co., Ltd.

Yasuaki Miyamoto

Jun Sakurai

Akira Sakamoto

Hideo Nakayama

Takayuki Yamada

Shinya Kyozuka

Takeshi Nakamura

Hiromi Otoma

Nobuaki Ueki

Masahiro Yoshikawa

Ryoji Ishii

Ichirou Asai

Seiya Omori

Terutaka Inoue

Kohtaro Handa

A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second semiconductor multi-layer film of a second conductive type, an electrode pad electrically coupled to the second semiconductor multi-layer film, and a post structure formed on the substrate, the post structure comprising a light emitter, the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure.

Vertical-cavity surface-emitting laser (VCSEL) device and the method of manufacturing thereof

A surface-emitting semiconductor array device includes a substrate, a plurality of light-emitting portions, an electrode pad portion formed on the substrate and disposed through the plurality of light-emitting portions and a dividing groove, and having a plurality of electrode pads formed on an insulating film, and a plurality of metal wirings for connecting each of the plurality of light-emitting portions to a corresponding electrode pad through the dividing groove, the dividing groove has a wave-shaped side wall formed on the substrate.

Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial transmitting system

A surface emitting semiconductor laser array includes multiple light-emitting portions arranged in a one-dimensional or two-dimensional array, each of the light-emitting portions including, on a substrate, an active region and a current funneling portion between first and second reflection mirrors, and a light-emission aperture above the second reflection mirror, laser beams being simultaneously emitted from the multiple light-emitting portions. At least one of the multiple light-emitting portions has a near field pattern different from those of other light-emitting portions.

Surface emitting semiconductor laser array and optical transmission system using the same

A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

Apparatus for fabricating surface emitting semiconductor laser

Surface emitting semiconductor laser

Surface emitting semiconductor laser, and method and apparatus for fabricating the same

A vertical resonator type surface light emitting semiconductor laser device includes a semiconductor substrate having formed thereon a first semiconductor multi-layered film reflection mirror, an active layer, a second semiconductor multi-layered film reflection mirror, and a contact electrode having an opening for emitting laser light. The opening is covered with a protective film for preventing damage during fabrication after the contact electrode has been formed. Or, the protective film is provided on the second semiconductor multi-layered film reflection mirror so that the contact electrode is superimposed on the surface of the protective film, and the opening is formed on the protective layer. In this way, there is provided a vertical resonator type surface light emitting semiconductor laser device having high reliability, capable of stably producing laser light with a low resistance and a high output, which output does not decrease over time.

Vertical resonator type surface light emitting semiconductor laser device and fabrication method thereof

Surface emitting semiconductor laser device and process for producing the same

Described is a semiconductor photo detector comprising, between a lower electrode and an upper electrode, an optical absorption layer which generates photo carriers, receiving light and an amplification layer which amplifies the photo carriers so generated. In the semiconductor photo detector, the amplification layer is formed of a well layer which causes an avalanche phenomenon and a barrier layer which has a band gap larger than that of the optical absorption layer. The well layer is formed of a crystal substance, by which at the interface with the barrier layer, the energy value of the conduction band of the photo carriers in the well layer is lower than that in the barrier layer and at the same time, the difference in the energy value of the conduction band between the well layer and the barrier layer is larger than the band gap between the valence band and the conduction band of the well layer.

Process for making semiconductor photo detector containing crystalline

Semiconductor photo detector containing crystalline amplification layer

Described is a semiconductor photo detector comprising, between two electrodes, at least one of said electrodes being a transparent electrode, an optical absorption layer which is composed of a non-single crystalline material, absorbs light and generates photo carriers and a carrier multiplication layer which is composed of a non-single crystalline material and multiplies the photo carriers generated by the optical absorption layer. The carrier multiplication layer is formed of a multilayer film obtained by stacking films each having plural layers which are composed of non-single crystalline Zn.sub.x Cd.sub.1-x M (0.ltoreq.x.ltoreq.1, M represents one selected from the group consisting of S, Se and Te) and are different in a composition ratio in accordance with a change in the value of x in said Zn.sub.x Cd.sub.1-x M, whereby a band discontinuity .DELTA.Ec of the conduction band can be made larger, an ionization rate of electrons can be heightened and the place where ionization occurs can be specified. As a result, sensitivity increase, noise reduction and low voltage drive can be attained.

Non-single crystalline semiconductor photo detector with super lattice

The first feature of the present invention resides in that in a method of semiconductor crystallization, comprising a characteristic determining step of applying first crystallizing energy to a predetermined area of an amorphous semiconductor thin film to determine the size of an area so as to form a single crystal nucleus on the area; and a polycrystalline semiconductor thin film forming step of forming a polycrystalline semiconductor thin film from the amorphous semiconductor thin film, the polycrystalline semiconductor thin film forming step, comprises: a film forming step of forming an amorphous semiconductor thin film on the surface of a substrate; a first crystallizing step of applying first crystallizing energy at regular intervals on the area having the size determined by the characteristic determining step of the amorphous semiconductor thin film; and a second crystallizing step of applying second crystallizing energy to the amorphous semiconductor thin film to grow the crystal of the amorphous semiconductor thin film from the crystal nucleus formed by the first crystallizing step.

Growing community of inventors

Kanagawa, Japan

Yasuaki Miyamoto