Merck Patent Gmbh

Ajinomoto Co., Ltd.

Yasuaki Ishikawa

Yukiharu Uraoka

Naofumi Yoshida

Hisashi Yasueda

Toshiaki Nonaka

Katsuto Taniguchi

Ippei Inoue

Ichiro Yamashita

Bin Zheng

The present invention relates to providing a thin film transistor substrate containing a protective film, which can impart high driving stability. The thin film transistor substrate contains a thin film transistor and a protective film containing a cured product of a siloxane composition which covers the thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition contains polysiloxane, a fluorine-containing compound, and a solvent.

Thin film transistor substrate provided with protective film and method for producing same

The present invention provides means useful for making devices, materials and the like that are excellent in photocatalytic activity, electric property or the like. Specifically, the present invention provides a fusion protein comprising a polypeptide portion capable of forming a multimer having an internal cavity, and a first peptide portion capable of binding to a first target substance and a second peptide portion capable of binding to a second target substance; a multimer of the fusion protein; a complex comprising the multimer of the fusion protein; and the like.

Fusion protein

Growing community of inventors

Ikoma, Japan

Yasuaki Ishikawa