Hitachi, Ltd.

Yasuaki Horiuchi

Kazuo Sato

Yoshio Kawamura

Akira Koide

Shinji Tanaka

Mitsuhiro Shikida

Toshimitsu Miyada

Noriyuki Kumasaka

Shigekazu Otomo

Takeo Yamashita

Kuninori Imai

Takeshi Tajima

Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.

Valve and semiconductor fabricating equipment using the same

A rotating drum for use in a magnetic recording system. A magnetic head is mounted on the rotating drum, and a magnetic recording medium is wound on the rotating drum, and the rotating drum is rotated so as to read and write signals. Alternatively, the magnetic recording medium is mounted on the rotating drum, and signals are read and written by a magnetic head fixed exteriorly of the rotating drum. The rotating drum has at least one opening or notch in a magnetic recording medium-winding surface thereof. In order to restrain the deformation of the rotating drum during the rotation thereof, the center of gravity of the drum is disposed substantially in registry with the axis of rotation of the drum.

Rotating drum having a center of gravity in registry with an axis of

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Yono, Japan

Yasuaki Horiuchi