Sumitomo Electric Industries, Limited

Terumo Kabushiki Kaisha

Yasuaki Higuchi

Masafumi Takemoto

Shinya Fujiwara

Yoshiaki Hagi

Takayuki Nishiura

Takuya Yanagisawa

Yoshio Mezaki

Kazuaki Konoike

Shigeaki Fuke

Hidetoshi Takayama

Muneyuki Nishioka

Masanori Morishita

Yusuke Horie

Kazunori Goto

An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 &#x3bc;m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0&#xd7;10to 8.0&#xd7;10cm, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm, and when am atomic concentration of tin is from 1.0&#xd7;10to 4.0&#xd7;10cmor an atomic concentration of iron is from 5.0&#xd7;10to 1.0&#xd7;10cm, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm.

Indium phosphide crystal substrate

A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 &#x3bc;m and not greater than 800 &#x3bc;m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0&#xd7;10cmand not higher than 3.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cmand not higher than 15000 cm, and when an atomic concentration of carbon is not lower than 1.0&#xd7;10cmand not higher than 5.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cmand not higher than 20000 cm.

Gallium arsenide crystal substrate

A GaAs substrate has a first surface. The sum of the number of particles having a longer diameter of more than or equal to 0.16 &#x3bc;m which are present in the first surface, per cmof the first surface, and the number of damages having a longer diameter of more than or equal to 0.16 &#x3bc;m which are present in a second surface, per cmof the second surface, is less than or equal to 2.1, the second surface being formed by etching the first surface by 0.5 &#x3bc;m in a depth direction.

GaAs substrate and method for manufacturing the same

An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value mof the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation &#x3c3;1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

Indium phosphide substrate, method of inspecting indium phosphide substrate, and method of producing indium phosphide substrate

An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Raat a center position on the first main surface, and surface roughnesses Ra, Ra, Ra, and Raat four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value mof the surface roughnesses Ra, Ra, Ra, Ra, and Rais 0.5 nm or less, and a standard deviation &#x3c3;of the surface roughnesses Ra, Ra, Ra, Ra, and Rais 0.2 nm or less.

A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10&#xb0; for the photoelectron take-off angle &#x3b8; by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As&#x2014;O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga&#x2014;O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

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Itami, Japan

Yasuaki Higuchi