Seiko Epson Corporation

Youtec Co., Ltd.

Advanced Material Technologies, Inc.

Krystal Inc.

Yasuaki Hamada

Takeshi Kijima

Eiji Natori

Koji Ohashi

Tomohiro Sakai

Setsuya Iwashita

Kazuya Kitada

Satoshi Kimura

Koji Sumi

Akio Ito

Tetsuya Isshiki

Tsuneo Handa

Masao Nakayama

Toshihiro Shimizu

Takayuki Yonemura

Akio Konishi

Hiromu Miyazawa

Junichi Karasawa

Tatsuya Shimoda

Yuuji Honda

Tomokazu Kobayashi

Yoshihiko Yokoyama

Satoru Hosono

Takeshi Nomura

Takafumi Noda

Yasuhiro Itayama

Tatsuo Sawasaki

Yasushi Tsuchiya

Motohisa Noguchi

Mayumi Ueno

Masami Hashimoto

Shunsuke Yoshida

Yoshiki Yano

A piezoelectric element includes: a first electrode formed at a vibration plate; a seed layer formed at the first electrode; a piezoelectric film containing potassium, sodium, and niobium and formed at the seed layer; and a second electrode formed at the piezoelectric film. The piezoelectric film contains lithium and one or more first transition elements. The seed layer contains bismuth. When the piezoelectric film is divided into two equal parts in a stacking direction, the second electrode side is defined as a first region, and the first electrode side is defined as a second region, a bismuth intensity obtained by SIMS measurement at a boundary between the first region and the second region is equal to or less than 1/500 of a maximum bismuth intensity obtained by the SIMS measurement of the piezoelectric film.

Piezoelectric element, droplet dispensing head, actuator, and vibrator

A piezoelectric element according to the present disclosure includes: a first electrode; a piezoelectric layer formed at an upper part of the first electrode; and a second electrode formed at an upper part of the piezoelectric layer, in which the piezoelectric layer contains potassium, sodium, and niobium, and a Young's modulus of the piezoelectric layer measured by a nanoindentation method exceeds 130 GPa.

Piezoelectric element, head chip, liquid ejection device, and sensor

A piezoelectric element includes: a first electrode; an oxide layer formed on the first electrode; a piezoelectric layer formed on the oxide layer and containing potassium, sodium, and niobium; and a second electrode formed on the piezoelectric layer. When a potential difference of 10 V is applied between the first electrode and the second electrode, a current density of a leak current differs by 10,000 times or more between a case in which the first electrode is set at a high potential and a case in which the second electrode is set at a high potential.

Piezoelectric element and liquid ejection head

A piezoelectric elementincludes a first electrode, a second electrode, and a piezoelectric layerprovided between the first electrodeand the second electrode. The piezoelectric layeris composed of a composite oxide having a perovskite-type structure and containing potassium (K), sodium (Na), and niobium (Nb), and has a first peak derived from a (100) plane, a second peak derived from a (010) plane, and a third peak derived from a (001) plane in an X-ray diffraction pattern obtained by θ-2θ measurement.

Piezoelectric element, piezoelectric element application device

A piezoelectric substrate includes: a substrate; a first electrode formed on the substrate; and a piezoelectric layer formed on the first electrode and containing potassium, sodium, and niobium. A full width at half maximum of an X-ray intensity peak on a plane (100) of the piezoelectric layer in a Psi axis-direction scan result of an X-ray diffraction measurement in which a surface of the piezoelectric layer is irradiated with X-rays at an angle of 54.74° from a direction perpendicular to the surface is more than 0° and 1.2° or less.

Piezoelectric substrate, piezoelectric element and liquid ejection head

An electric current based on electric charge produced on the piezoelectric body changes by going through a first path, a second path, a third path, and a fourth path in this order. On the first path, the electric current becomes larger as the voltage becomes higher. On the second path, the electric current becomes smaller as the voltage becomes higher. On the third path, the electric current becomes larger as the voltage becomes higher. On the fourth path, the electric current becomes smaller as the voltage becomes higher.

Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

Film structure body and method for manufacturing the same

A piezoelectric element includes: a first electrode and a second electrode; and a piezoelectric layer provided between the first electrode and the second electrode and having a perovskite structure, in which 0&#x3c;P/P&#x2264;0.5 and 0&#x3c;Pwhere, when a positive predetermined voltage is applied to the piezoelectric layer, then a voltage applied to the piezoelectric layer is set to 0 V for 0.1 seconds, and then a triangular wave voltage waveform having a maximum voltage of the predetermined voltage is applied to the piezoelectric layer to obtain a hysteresis curve drawn counterclockwise, Pis a residual polarization amount at a start point of the hysteresis curve and Pis a residual polarization amount at an end point of the hysteresis curve.

Piezoelectric element, liquid discharge head, and printer

To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.

Film structure body, actuator, motor and method for manufacturing film structure body

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2&#x3c;Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3&#x2265;Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is &#x3b1; and &#x3b1;&#xd7;Tc3+(1&#x2212;&#x3b1;)&#xd7;Tc2 is Tc4, |Tc4&#x2212;Tc2|&#x2264;50&#xb0; C.

Piezoelectric material, method of manufacturing the same, piezoelectric element, and piezoelectric element application device

An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.

Piezoelectric film and piezoelectric ceramics

A photoelectric conversion element includes a ferroelectric layer; a first electrode and a second electrode provided on a surface or a surface layer portion of the ferroelectric layer; a common electrode provided on a surface or a surface layer portion of an opposite side to a side of the ferroelectric layer on which the first electrode and the second electrode are provided; and a pair of lead-out electrodes extracting electric power from the ferroelectric layer, in which the first electrode and the second electrode are arranged alternately in a predetermined direction.

Photoelectric conversion element and photovoltaic cell

A photoelectric conversion element includes a PN junction formed from an N-type oxide layer and a P-type oxide layer. The P-type oxide layer is formed from an oxide having a perovskite structure.

A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.

Photoelectric conversion element and method of manufacturing the same

A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.

Growing community of inventors

Suwa, Japan

Yasuaki Hamada