Tencent Technology (shenzhen) Company Limited

Chinese Academy of Sciences

Tencent Technology Company Limited

Yarui Zheng

Shengyu Zhang

Wenlong Zhang

Yu Zhou

Zhenxing Zhang

Sainan Huai

Chuhong Yang

Hui Xing Wang

Yicong Zheng

Maochun Dai

Yongdan Huang

Chenji Zou

Sunan Ding

Kanglin Xiong

Jiagui Feng

Xiao Chen

Biao Wu

This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

Method for fabricating air bridge, air bridge structure, and superconducting quantum chip

This application discloses methods and devices for a quantum chip, a quantum processor and a quantum computer, and relates to the field of quantum technology. The quantum chip includes a bottom sheet and a top sheet; a qubit array disposed on the top sheet, the qubit array comprising a plurality of qubits distributed in an array structure of M rows by N columns, and M and N being both integers greater than 1; a reading cavity disposed on the bottom sheet, and the reading cavity being configured to acquire status information of a qubit in the qubit array; and the bottom sheet and the top sheet being electrically connected.

Quantum chip, quantum processor and quantum computer

A method for processing a frequency control signal includes providing a square wave pulse to a target qubit, and controlling, after a first time elapses from an end time of the square wave pulse, the target qubit to rotate around a Y axis by a first target distance. The first time has a value that is variable. The method includes performing, after a second time elapses from the first time, a QST measurement on the target qubit and reconstructing a density matrix of the target qubit based on the QST measurement to obtain a phase parameter value of the target qubit associated with the value of the first time. Further, the method includes varying the first time and repeating the QST measurement in response to values of the first time to obtain phase parameter values associated with the values of the first time; and adjusting the frequency control signal accordingly.

Method for processing frequency control signal of qubit and superconducting quantum chip

A superconducting quantum hybrid system includes: a silicon carbide (SiC) epitaxial layer; and a superconducting qubit line, the superconducting qubit line corresponding to a superconducting qubit, where a designated region of the SiC epitaxial layer includes a nitrogen vacancy (NV) center, the NV center being formed by implanting nitrogen ions into the designated region of the SiC epitaxial layer, and where the superconducting qubit line is located on a surface of the SiC epitaxial layer, the superconducting qubit is coupled to a solid-state defect qubit, and the solid-state defect qubit is a qubit corresponding to the NV center in the designated region.

Superconducting quantum hybrid system, computer device, and quantum chip

Embodiments of this disclosure provide a photoresist structure, a patterned deposition layer, a semiconductor chip and a manufacturing method thereof According to the method for manufacturing a photoresist structure, a single photoresist is used, a second photoresist layer having an undercut can be obtained by only one development process using a single developing solution, and the size of the undercut can be controlled by the development time, thereby solving the problems such as difficulty in lift-off caused by adhesion of the deposited material to the sidewall of the photoresist structure in traditional lift-off processes.

Photoresist structure, patterned deposition layer, semiconductor chip and manufacturing method thereof

A production line device prepares a superconducting circuit layer on a substrate. The device prepares an under bump metallization (UBM) layer on an upper surface of the superconducting circuit layer. A superconducting connection is formed between the UBM layer and the superconducting circuit layer. The production device prepares a welding spot on an upper surface of the UBM layer to obtain a qubit assembly configured for a flip-chip superconducting quantum chip. A superconducting electrical connection is formed between the welding spot and the UBM layer.

Qubit assembly, qubit assembly preparation method, chip, and device

This disclosure discloses a method for preparing an indium pillar, a chip substrate and a chip. The method includes: applying a first photoresist layer on a substrate; applying a second photoresist layer on the first photoresist layer; covering a part of a surface of the second photoresist layer; underexposing the part of the second photoresist layer to obtain a processed second photoresist layer; developing and fixing the processed second photoresist layer to form an undercut structure; etching the first photoresist layer through the undercut structure to form an expose area; and depositing an indium material on the exposed area to form an indium pillar solder.

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Shenzhen, China

Yarui Zheng