Rensselaer Polytechnic Institute

Yaron Danon

Ishwara B Bhat

Rajendra P Dahal

James Jian-qiang Lu

Jacky Kuan-Chih Huang

James J Q Lu

Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

Radiation-detecting structures and fabrication methods thereof

Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities.

Fabricating radiation-detecting structures

Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.

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Selkirk, NY, United States of America

Yaron Danon