Electronics and Telecommunications Research Institute

Korea Telecom

Yark Yeon Kim

Han Young Yu

Won Ick Jang

Moon Gyu Jang

Seong Jae Lee

Yong Ju Yun

Yong Sun Yoon

Jae Heon Shin

Myung Sim Jun

Bong Kuk Lee

Chel Jong Choi

Gee Pyeong Han

Sang Seok Lee

Duk Jun Kim

Tae Goo Choy

Tae Youb Kim

Byoung Chul Park

Jin Woo Hahn

Eun-Ju Jeong

Changho Han

Kyoung Ik Cho

Young Jun Kim

Mun Cheol Paek

Chang Geun Ahn

In Bok Baek

Zin Sig Kim

Yeung Joon Sohn

Byung Hoon Kim

Soon Young Oh

Won Gi Hong

Ji Eun Lim

Provided is a plasma generation apparatus including: a housing in which a window is defined at one side in a first direction; a stick type plasma source provided in the housing to generate plasma toward the window; and a driving unit coupled to the plasma source to allow one end of the plasma source to perform a reciprocating movement in a second direction that is a longitudinal direction of the window.

Plasma generation apparatus

A plasma generating apparatus according to embodiments of the inventive concept, which provides plasma to a biological material, includes a housing configured to provide an inner space in which plasma is generated, a ground electrode coupled to one side of the housing, a power electrode coupled to the other side of the housing, and a controller configured to control a generation mode of the plasma. The generation mode includes a first mode in which the plasma is provided to the biological material while generating the plasma and a second mode in which the plasma is generated in the housing, and then the generated plasma is provided to the biological material.

Plasma generating apparatus and treatment method using the same

A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Vibration device including support portion

Provided herein an apparatus for generating plasma, the apparatus including a nozzle array, first electrode, and housing. The nozzle discharges plasma. The first electrode is disposed to surround the nozzle array. The housing is disposed to surround the nozzle array and first electrode. The nozzle includes a plurality of nozzles disposed adjacent to one another and in the form of an array, each nozzle configured to discharge plasma. Therefore, it is possible to generate a large size plasma evenly and stably.

Apparatus for generating plasma

Provided herein is a microwave device using a magnetic material nano wire array and a manufacturing method thereof, the device including a template having a nano hole array filled with a metal magnetic material.

Microwave device using magnetic material nano wire array and manufacturing method thereof

Provided are a filter fabrication method and the filter formed thereby. In this method, a three-dimensional graphene polymer complex filter can be easily fabricated. By forming various patterns at a surface of a collector, patterns can be simply formed at a surface of a filter. This provides advantages at control of pressure difference which can be one of the very important factors necessary for designing and fabricating a filter. Since the filter includes graphene particles homogeneously combined to the polymer nanofiber, the filter can represent a superior antibiosis.

Filter fabrication method and the filter formed thereby

A resonator includes a dielectric substrate, a conductor disposed over the dielectric substrate, and a high-dielectric pattern disposed between outer parts of the conductor. The conductor includes an arc part, which has a C shape, and the outer parts, which respectively extend outward from both ends of the arc part, such that the conductor has an omega shape as a whole. The high-dielectric pattern has a relative permittivity greater than a relative permittivity of the dielectric substrate. The resonator has a flat plate shape to increase a filling factor of a sample, thereby improving measurement sensitivity. Also, the resonator is miniaturized, and thus a biosensor system including the resonator is also miniaturized.

Resonator and biosensor system including the same

Provided are fiber fabrication method and the fiber fabricated thereby. In this method, different monomer solutions are electrospun through nozzles whose outlets are stuck to each other and simultaneously interfacially polymerized to form a polymer fiber without a complicated process of preparing a polymer solution. Therefore, a polymer fiber can be simply prepared.

Method of fabricating a fiber

Plasma jet assemblies are provided. A plasma jet assembly may include: a tube through which a gas flows; a power source providing a high frequency power exciting the gas in plasma state; a power electrode applying the high frequency power to the gas; and a plasma control unit removing arc discharge of a plasma gas generated in the tube by the high frequency power applied to the power electrode.

Plasma jet assembly and plasma brush including the same

Disclosed is a space perception device which includes a transceiver unit transmitting and receiving a signal; a processing unit analyzing signals transmitted and received through the transceiver unit to search location information of an obstacle at a space; and a vibration unit providing a user with location information of an obstacle at a space in response to a control of the processing unit. The vibration unit includes a plurality of vibrators having different three-dimensional coordinates.

Space perception device

Provided is a dissolved oxygen measurement system. The dissolved oxygen measurement system includes a hydrogen storage device storing hydrogen, a first hydrogen fuel cell in which the hydrogen stored in the hydrogen storage device and water supplied from the outside in real time react with each other to generate first electricity energy, a water storage tank storing the water supplied from the outside, a second hydrogen fuel cell in which the water supplied from the water storage tank and the hydrogen stored in the hydrogen storage device react with each other to generate second electricity energy, and a control unit analyzing a difference between the first electricity energy and the second electricity energy.

Dissolved oxygen measurement system

Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.

Nanowire memory

Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

Method of manufacturing a Schottky barrier tunnel transistor

Provided is a method of manufacturing a semiconductor device including a high-k dielectric thin layer formed using an interfacial reaction. The method includes the steps of: forming an oxide layer on a silicon substrate; depositing a metal layer on the oxide layer to form a metal silicate layer using an interfacial reaction between the oxide layer and the metal layer; forming a metal gate by etching the metal silicate layer and the metal layer; and forming a lightly doped drain (LDD) region and source and drain regions in the silicon substrate after forming the metal gate. In this method, a semiconductor device having high quality and performance can be manufactured by a simpler process at lower cost.

Method of manufacturing semiconductor device

Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

Growing community of inventors

Daejeon, South Korea

Yark Yeon Kim