Yangtze Memory Technologies Co., Ltd.

Yaqin Liu

Wenxi Zhou

Kun Zhang

Linchun Wu

The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes forming a dielectric stack on a substrate, and forming a first opening penetrating through the dielectric stack and extending into the substrate from a first side of the dielectric stack. The method also includes forming a first layer and a second layer inside the first opening from the first side of the dielectric stack, wherein the first layer covers a sidewall and a bottom of the first opening. The method further includes removing a portion of the first layer located at the bottom of the first opening from a second side of the dielectric stack to expose a portion of the second layer. The method further includes forming a second semiconductor layer from the second side of the dielectric stack to contact the exposed portion of the second layer.

Growing community of inventors

Hubei, China

Yaqin Liu