Huazhong University of Science and Technology

Yaoyao Fu

Xiangshui Miao

Yi Bu Li

Yuhui He

Xiaodi Huang

The present invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method includes: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer by using a magnetron sputtering manner to deposit the upper electrode, controlling upper electrode metal particles to have suitable kinetic energy by controlling sputtering power, controlling a vacuum degree of a region where the upper electrode and the resistive material layer are located, such that a redox reaction occurs spontaneously between the upper electrode and the resistive material layer during the deposition of the upper electrode to form a built-in bipolar gating layer; and continuously depositing the upper electrode on the built-in bipolar gating layer.

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Hubei, China

Yaoyao Fu