Samsung Electronics Co., Ltd.

Yaoqi Dong

Shigenobu Maeda

Dong-won Kim

Keun Hwi Cho

Sadaaki Masuoka

Mun Hyeon Kim

Han Su Oh

Keon-Yong Cheon

Sung-Man Lim

Provided is a semiconductor device having first and second gate electrodes. The semiconductor device includes a substrate, an active region extending in a first direction on the substrate, a first gate electrode crossing the active region and extending in a second direction, and a second gate electrode extending in the second direction on the first gate electrode, wherein the first gate electrode has a first width in the first direction, and wherein the second gate electrode has a second width in the first direction, the second width being less than the first width.

Semiconductor device having first and second gate electrodes and method of manufacturing the same

In a method of forming MOS transistor, a gate structure is formed on a substrate and a first spacer layer is formed on the substrate conformal to the gate structure. A second spacer layer is formed on the first spacer layer. A second spacer is formed on the first spacer layer corresponding to a sidewall of the gate structure by partially removing the second spacer layer from the first spacer layer. Impurities are implanted in the substrate by an ion implantation process using the gate structure including the first spacer layer and the second spacer as an ion implantation mask to form source/drain extension regions at surface portions of the substrate around the gate structure.

Method of manufacturing a semiconductor device

Growing community of inventors

Suwon-si, South Korea

Yaoqi Dong