Qualcomm Incorporated

Yaojun Zhang

Wenqing Wu

Karim Arabi

Kendrick Hoy Leong Yuen

Systems and methods pertain to avoiding undesirable current paths or sneak paths in spintronic logic gates formed from Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) elements. Sneak path prevention logic is coupled to the GSHE MTJ elements, to prevent the sneak paths. The sneak path prevention logic may include one or more transistors coupled to the one or more GSHE MTJ elements, to restrict write current from flowing from an intended pipeline stage to an unintended pipeline stage during a write operation. The sneak path prevention logic may also include one or more diodes coupled to the one or more GSHE MTJ elements to prevent a preset current from flowing into input circuitry or a charge current generation circuit. A preset line may be coupled to the one or more GSHE MTJ elements to divert preset current from flowing into unintended paths.

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Pittsburgh, PA, United States of America

Yaojun Zhang