Trw Limited

Northrop Grumman Systems Corporation

Northrop Grumman Space & Mission Systems Corporation

Yaochung Chen

Richard Lai

Michael Edward Barsky

Huan-Chun Yen

Ronald W Grundbacher

Harvey Newell Rogers

Daisy L Ingram

Robert Coffie

Vincent Gambin

Roger S Tsai

Michael Wojtowicz

Po-Hsin Liu

Ioulia Smorchkova

Xianglin Zeng

Carol Osaka Namba

Stephen J Sarkozy

James C K Lau

Rosie M Dia

William M Brunner

Vladimir Medvedev

A field effect transistor (FET) including a substrate, a plurality of semiconductor epitaxial layers deposited on the substrate, and a heavily doped gate layer deposited on the semiconductor layers. The FET also includes a plurality of castellation structures formed on the heavily doped gate layer and being spaced apart from each other, where each castellation structure includes at least one channel layer. A gate metal is deposited on the castellation structures and between the castellation structures to be in direct electrical contact with the heavily doped gate layer. A voltage potential applied to the gate metal structure modulates the at least one channel layer in each castellation structure from an upper, lower and side direction.

Wrap around gate field effect transistor (WAGFET)

A vertical cavity surface emitting laser (VCSEL) including a substrate and a bottom distributed Bragg reflector (DBR) having a plurality of layers deposited on the substrate. The VCSEL also includes a first charge confining layer deposited on the bottom DBR, an active region deposited on the first charge confining layer, and a second charge confining layer deposited on the active region. A current blocking layer is provided on the second charge confining layer, and a top epitaxial DBR including a plurality of top epitaxial DBR layers is deposited on the current blocking layer. A top electrode is deposited on the top epitaxial DBR, a bottom electrode is deposited on the bottom DBR and adjacent to the active region, and a top dielectric DBR is deposited on the top epitaxial DBR and the top electrode.

Vertical cavity surface emitting laser with composite reflectors

A relatively wide bandwidth low noise amplifier with an active input matching network. The active load maybe formed from a field effect transistor (FET) or high electron mobility transistor (HEMT) in a common gate configuration. The active load input matching network has a lower overall noise component to only transistor channel noise than reactive matching components, such as inductors and capacitors. By utilizing the active mode input matching network in accordance with the present invention, the circuit layout such amplifiers can be reduces significantly, for example, 23 mils&#xd7;47 mils.

Active input load wide bandwidth low noise HEMT amplifier

A method of fabricating a T-gate HEMT with a club extension comprising the steps of: providing a substrate; providing a bi-layer resist on the substrate; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to a T-gate opening; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to the shape of the club extension wherein the area corresponding to the club extension is approximately 1 micron to an ohmic source side of a T-gate and approximately 0.5 microns forward from a front of the T-gate; developing out the bi-layer resist in the exposed area that corresponds to the T-gate opening; developing out the bi-layer resist in the exposed area that corresponds to the club extension; and forming the T-gate and club extension through a metallization process.

Club extension to a T-gate high electron mobility transistor

Apparatuses ( ), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses ( ) include a fixture ( ) having a plurality of horizontal receptacles ( ) for receiving the semiconductor wafers (W). The loaded fixtures ( ) are then immersed into an etchant solution ( ) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution ( ) is preferably heated to about 40&deg; C.-50&deg; C. and constantly stirred with a magnetic stirring bar ( ). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution ( ). The apparatuses ( ) are capable of simultaneously thinning several semiconductor wafers (V) down to a final thickness of about 25 &mgr;m.

Wafer thinning techniques

A hybrid model formed from a semi-physical device model along with an accurate data-fitting model in order to implement a relatively accurate physical device model as a large signal microwave circuit computer-aided design (CAD) tool. The semi-physical device model enables accurate representation of known physical device characteristics and measured bias-dependent characteristics. This model is used to accurately simulate the effect of process variation and environmental changes on bias-dependent characteristics. The data-fitting model is used to model these characteristics with relatively good fidelity. The expressions of the model are constructed to be charge conservative. As such, the model is computationally robust within the harmonic balance algorithms employed by known large signal microwave circuit CAD tools.

Hybrid semi-physical and data fitting HEMT modeling approach for large signal and non-linear microwave/millimeter wave circuit CAD

A method is provided for backside processing a semiconductor wafer ( ) including applying a polymer based protective coating ( ) on the wafer, depositing a barrier layer of ceramic ( ) on the protective coating, and coating the ceramic layer with a thermoplastic based adhesive ( ). Thereafter, the wafer ( ) is bonded to a perforated substrate ( ) and then lapped and polished to a desired thickness and patterned with an etch mask. A high temperature plasma etching process is then used to etch via holes in the wafer ( ). After etching and subsequent backside processing, the adhesive layer ( ) is dissolved in acetone to separate the wafer ( ) from the substrate ( ). The protective coating ( ) is then dissolved with a solvent to separate the ceramic layer ( ) from the finished wafer ( ).

Wafer adhesive for semiconductor dry etch applications

An enhancement mode FET device ( ) that employs a strained N-doped InAlAs charge shield layer ( ) disposed on an intrinsic InAlAs barrier layer ( ). A gate metal electrode ( ) of the FET device ( ) is controllably diffused through a recess ( ) into the shield layer ( ) to the barrier layer ( ). The resulting enhancement mode device ( ) provides an excellent Schottky barrier with a high barrier height that inhibits undesirable surface depletion effects through charge shielding by the shield layer ( ) in the regions between the recess edge and the gate metal. Minimizing surface depletion effects makes the device more robust by making the surface less sensitive to processing conditions and long-term operation effects.

Enhancement mode device

A method for determining the etch depth of a gate recess ( ) in an InP based FET device ( ). The source-drain, current-voltage (I-V) relationship is monitored during the etching process. As the etch depth increases, a kink is formed in the linear portion of the I-V relationship. When the kink current reaches a desired value, the etching is stopped. The kink current is a strong function of etch depth, so small differences in etch depth can be easily targeted. By controlling the etch depth, the characteristics of the transistor can be reproducibly controlled and optimized.

Method for determining etch depth

Greater levels of microwave and millimeter microwave frequency power is achieved in a new power amplifier structure in which sixteen MMIC amplifiers are supported in a 4&times;4 row by column matrix and the output (and input) manifold is of a &ldquo;crazy-H&rdquo; power combining structure. Even greater output power, on the order of 100 watts at 35 GHz, is achieved by combining multiple numbers of such power amplifier units through a radial combiner.

Highly efficient compact ultra-high power source

An umbrella-shaped matching network (,) for matching phase and impedance in a power amplifier (,). The matching network (,) employs rounded corners (,). The rounded corners (,) reduce microwave signal scattering losses, because they are less prone to signal radiation than square corner power combining networks. The matching network (,) includes slits (,) defining separated arms (,). The slits (,) are positioned in such a way that they provide phase and amplitude balance for the signal presented to the amplifiers (,). The slits (,) also prevent current from traveling transversely.

Combining network to implement a power amplifier having monolithically integrated planar interconnect and transistors

A field effect transistor with a double sided airbridge comprises a substrate containing a conductive region and source, drain and gate electrodes disposed on the substrate. The gate electrode has a finger portion with a first end secured to the substrate between the source and drain electrodes and a second end, and a double sided airbridge portion flaring outwardly from the second end and having opposed first and second extremities. A first gate pad is disposed on said substrate outwardly from the source electrode and is connected to the first extremity. A second gate pad is disposed on said substrate outwardly from the drain electrodes and is connected to the second extremity. The gate pads serve to support the airbridge gate finger so as to reduce stress on the gate finger. The first and second gate pads receive and transmit signals through the airbridge and to and from the gate finger.

Growing community of inventors

Rancho Palos Verdes, CA, United States of America

Yaochung Chen