Growing community of inventors

Albany, NY, United States of America

Yao Yao

Average Co-Inventor Count = 4.60

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 3

Yao YaoRuilong Xie (9 patents)Yao YaoVeeraraghavan S Basker (9 patents)Yao YaoAndrew Mark Greene (9 patents)Yao YaoAlexander Reznicek (2 patents)Yao YaoDevendra K Sadana (2 patents)Yao YaoNing Li (2 patents)Yao YaoJoel Pereira De Souza (2 patents)Yao YaoKangguo Cheng (1 patent)Yao YaoZhenxing Bi (1 patent)Yao YaoJingyun Zhang (1 patent)Yao YaoReinaldo Ariel Vega (1 patent)Yao YaoRobert Russell Robison (1 patent)Yao YaoYun Seog Lee (1 patent)Yao YaoPietro Montanini (1 patent)Yao YaoYao Yao (11 patents)Ruilong XieRuilong Xie (1,158 patents)Veeraraghavan S BaskerVeeraraghavan S Basker (463 patents)Andrew Mark GreeneAndrew Mark Greene (128 patents)Alexander ReznicekAlexander Reznicek (1,282 patents)Devendra K SadanaDevendra K Sadana (829 patents)Ning LiNing Li (321 patents)Joel Pereira De SouzaJoel Pereira De Souza (130 patents)Kangguo ChengKangguo Cheng (2,827 patents)Zhenxing BiZhenxing Bi (180 patents)Jingyun ZhangJingyun Zhang (172 patents)Reinaldo Ariel VegaReinaldo Ariel Vega (164 patents)Robert Russell RobisonRobert Russell Robison (146 patents)Yun Seog LeeYun Seog Lee (75 patents)Pietro MontaniniPietro Montanini (32 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. International Business Machines Corporation (11 from 163,870 patents)


11 patents:

1. 12432960 - Wraparound contact with reduced distance to channel

2. 12255204 - Vertical FET replacement gate formation with variable fin pitch

3. 12100744 - Wrap around contact process margin improvement with early contact cut

4. 11990508 - Dual step etch-back inner spacer formation

5. 11695057 - Protective bilayer inner spacer for nanosheet devices

6. 11227923 - Wrap around contact process margin improvement with early contact cut

7. 11139372 - Dual step etch-back inner spacer formation

8. 11081568 - Protective bilayer inner spacer for nanosheet devices

9. 11056399 - Source and drain EPI protective spacer during single diffusion break formation

10. 10546971 - Photodetector having a tunable junction region doping profile configured to improve contact resistance performance

11. 10158039 - Heterojunction diode having a narrow bandgap semiconductor

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as of
10/28/2025
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