Macronix International Co., Ltd.

Yao-Wu Cheng

Ray-Lin Wan

Chun-Hsiung Hung

Tom D Yiu

Fuchia Shone

Kuen-Long Chang

Teruhiko Kamei

Tien-Ler Lin

Chun Hsiung Hung

Tzeng-Huei Shiau

I-Long Lee

Yin-Shang Liu

Weitong Chuang

Ting-Chung Hu

Kong-Mou Liou

Chung-Hsiung Hung

Triple well charge pump

Write protected, non-volatile memory device with user programmable

A new flash memory cell structure and operational bias is based on the use of a triple well flash memory cell which allows pre-programming by Fowler Nordheim (F-N) tunneling over blocks of cells at a time. The floating gate memory cell is made in a semiconductor substrate having a first conductivity type, such as p-type. A first well within the substrate by having a second conductivity type different than the first conductivity type is included. A second well within the first well is also included having the first conductivity type. A drain and a source are formed in the second well having the second conductivity type, and spaced away from one another to define a channel area between the drain and the source. A floating gate and control gate structure is included over the channel area. The floating gate memory cell is coupled with circuits that induce F-N tunneling of electrons out of the floating gate into the channel area of the substrate for erasing by applying a positive voltage to the second well, such as a voltage higher than the supply voltage, applying a positive voltage to the first well, which is substantially equal to the positive voltage of the second well, applying a negative voltage to the control gate of the cell, while the substrate is grounded. A block wide pre-program operation involves F-N tunneling of electrons into the floating gate from the channel area, using a negative voltage in the second well.

Fowler-Nordheim (F-N) tunneling for pre-programming in a floating gate

Floating gate memory device and method for terminating a program load

Page mode floating gate memory device storing multiple bits per cell

Technique for reconfiguring a high density memory

Decoded wordline driver with positive and negative voltage modes

Growing community of inventors

Taipei, Taiwan

Yao-Wu Cheng