Opto Tech Corporation

Yao-Te Wang

Lung-Han Peng

Po-Chun Yeh

Po-Ting Lee

A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first material layer, the active layer includes a second material layer, and the second barrier layer includes a third material layer. The N-type layer is disposed over the tunneling structure. An energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer. Each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.

White LED chip and white LED packaging device

A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.

Growing community of inventors

Taipei, Taiwan

Yao-Te Wang