Semiconductor Manufacturing International (Shanghai) Corporation

Semiconductor Manufacturing International (Beijing) Corporation

Yao Liu

Fucheng Chen

Herb He Huang

Linbo Shi

The present disclosure provides bond pad structures, boning ring structure; and MEMS device packaging methods. An exemplary bonding pad structure includes a plurality of first metal blocks made of a first metal material; and a plurality of second metal blocks made of a second metal material. The plurality of first metal blocks are used to prevent the squeezing out and extending of the plurality of second metal blocks. On at least one equal dividing plane of the bonding pad structure, the first metal material is shown at least one time; and the second metal material is shown at least one time.

Bonding pad structure, bonding ring structure, and MEMS device packaging method

A method for manufacturing a semiconductor device may include providing a first dielectric layer and a first set of conductive pads on a first substrate. Each conductive pad of the first set of conductive pads may be positioned between portions of the first dielectric layer. The method may further include providing a first insulating material layer to cover the first dielectric layer and the first set of conductive pads. The method may further include removing portions of the first insulating material layer to form a first insulating layer. Openings of the first insulating layer may expose the first set of conductive pads.

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Shanghai, China

Yao Liu