Taiwan Semiconductor Manufacturing Comp. Ltd.

Yao-Kwang Wu

Huan-Just Lin

Kuei Shun Chen

Chia-Chu Liu

Hui-Chi Huang

Mu-Chi Chiang

Hsiao-Tzu Lu

Chie-Iuan Lin

Bi-Fen Wu

Minchang Liang

A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including a first device disposed in a first device region, the first device including a first gate structure, first gate spacers formed on the sidewalls of the first gate structure, and first source and drain features and a second device disposed in a second device region, the second device including a second gate structure, second gate spacers formed on the sidewalls of the second gate structure, and second source and drain features. The semiconductor device further includes a contact etch stop layer (CESL) disposed on the first and second gate spacers and interconnect structures disposed on the first and second source and drain features. The interconnect structures are in electrical contact with the first and second source and drain features and in contact with the CESL.

Field effect transistors and method of forming the same

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device. The method also includes forming a step-forming-hard-mask (SFHM) on the MG stack in a predetermined area on the semiconductor substrate, performing MG recessing, depositing a MG hard mask over the semiconductor substrate and recessing the MG hard mask to fully remove the MG hard mask from the MG stack in the predetermined area.

Method of semiconductor integrated circuit fabrication

Growing community of inventors

Hsinchu, Taiwan

Yao-Kwang Wu