Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Yao-Jen Tsai

Chih-Fu Chang

Chin-Yuan Ko

Chun-Hao Huang

Sheng Chiang Hung

David Yen

Keng-Hui Liao

Yuan-Jen Liao

Shih-Che Fang

Hung-Che Hsueh

Chih Mou Huang

Chih-Kang Chuang

Chih-kai Yang

Chih-fu Chang

Yee-Ren Wuang

Chia-Jen Leu

An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first intermetal dielectric (IMD) layer disposed over a plurality of conductive features and a first passive component disposed on the first IMD layer in a first region of the substrate. The structure further includes a second passive component disposed on the first IMD layer in a second region of the substrate. The second passive component includes a first conductive layer, and the first conductive layer has a first thickness. The structure further includes a second IMD layer disposed on the first passive component in the first region and on the second passive component and a portion of the first IMD layer in the second region. The second IMD layer has a second thickness ranging from about five times to about 20 times the first thickness.

Interconnect structure and methods of forming the same

A method includes providing a substrate of a first conductivity type, the substrate including a first circuit region and a second circuit region; forming a first well region of a second conductivity type in the first circuit region of the substrate; forming a first doped region of the second conductivity type in the first well region; forming a diode in the second circuit region of the substrate; forming a first transistor and a second transistor over the substrate in the first circuit region and the second circuit region, respectively; forming a discharge structure over the substrate to electrically couple the first doped region to the diode; and forming a metallization layer over the discharge structure to electrically couple the first transistor to the second transistor subsequent to the forming of the diode, wherein charges accumulated in the first well region are drained to the substrate through the discharge structure.

Semiconductor structure including discharge structures and method for fabricating the same

An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a dissipation device in the substrate, a second signal device in the substrate, a first electrical path between the first pickup device and the dissipation device, and a second electrical path between the first signal device and the second signal device. The dissipation device is outside of the deep n well, and the second signal device is outside of the deep n well. A highest point of the first electrical path is lower than a highest point of the second electrical path.

Integrated circuit structure and method of forming the same

A photosensor device with dark current cancellation is disclosed. The photosensor device comprises a first and second photosensors, a first and second current replication circuits and a digital signal generator. The first photosensor has a first dark current but does not receive any photo signal. The second photosensor has a second dark current and receives a photo signal to generate photocurrent according to the photo signal. The first current replication circuit generates a replicated current according to the first dark current and injects the replicated current into the second photosensor for cancelling the second dark current from the second photosensor. The second photosensor is coupled to the second current replication circuit which generates charge and discharge currents according to the photocurrent of the second photosensor. The second current replication circuit is coupled to a digital signal generator which generates digital signals according to the charge and discharge functions, and the electrical characteristic of the digital signal is related to the intensity of the photo signal.

Photosensor device with dark current cancellation

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Kaohsiung, Taiwan

Yao-Jen Tsai