Taiwan Semiconductor Manufacturing Comp. Ltd.

Yao-Hwan Kao

Ching-Hai Yang

Shang-Sheng Li

Kuo-Pin Chen

Hsiang-Kai Tseng

Chuan-Wei Chen

Po-Chang Huang

Ming-Fa Chen

Chin-Hsiang Lin

Fei-Gwo Tsai

Yung-Cheng Chen

Kai-Yuan Cheng

De-Yuan Lu

Yi-Chuan Lo

Li-Jen Ko

Feng-Ning Lee

Hsun-Peng Lin

Yuan-Ting Huang

Po-Chun Lee

Wei-Han Huang

Hao Yuan Chang

Yung-Chang Lu

Jian-Yuan Lai

Li-Kong Tum

Steven Liu

Jia-Sheng Lee

Wen-Hwo Liu

Chi-Ren Hsieh

A method for manufacturing a semiconductor device includes forming a photoresist layer that includes a photoresist composition over a wafer to produce a photoresist-coated wafer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern in the photoresist layer. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer under a first pressure gas flow setting in a development chamber. The photoresist layer is rinsed, under the first pressure gas flow setting, to form a patterned photoresist layer exposing a portion of the wafer in the development chamber. The patterned photoresist layer is spin dried under a second pressure gas flow setting. A pressure of the development chamber under the second pressure gas flow setting is greater than the pressure of the development chamber under the first pressure gas flow setting.

Method and system for manufacturing a semiconductor device

A method, comprising forming a material layer over a substrate; illuminating at least one region of the material layer with a light; recording strength of the light reflected from the at least one region; and determining a thickness of the material layer in the at least one region according to the strength of the light.

Semiconductor manufacturing apparatus and method thereof

A method for manufacturing a semiconductor device includes forming a photoresist layer comprising a photoresist composition over a substrate to form a photoresist-coated substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern in the photoresist layer. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist layer exposing a portion of the substrate, and a purge gas is applied to the patterned photoresist layer.

A spin dispenser module and methods for using the same is disclosed. The spin dispenser module includes a cup having a basin with sidewalls and an exhaust, a rotatable platform situated inside the cup adapted for holding and rotating a substrate, a liquid dispenser disposed over the rotatable platform for dispensing a liquid coating material on top of the substrate, one or more ejector inlets disposed over the rotatable platform, the one or more ejectors connected to a negative pressure source, and a motor coupled to the rotatable platform to rate the rotatable platform at different rotational speeds. The one or more ejector inlets may be translatable and/or rotatable with optionally adjustable suction pressure. The ejector inlets operate after a liquid coating material is dispensed to avoid deposition of suspended organic compounds after a coating is formed.

Spin dispenser module substrate surface protection system

Embodiments of a semiconductor processing apparatus are provided. The semiconductor processing apparatus includes a housing and a support base disposed in the housing. The semiconductor processing apparatus also includes a carrying arm movably disposed on the support base and a nozzle device disposed on the carrying arm. The semiconductor processing apparatus further includes a wafer plate disposed on the support base. When a cleaning process is performed, the carrying arm is moved toward the wafer plate, and the nozzle device emits a first gas toward the support base and the wafer plate.

Semiconductor processing apparatus and method of operating the same

A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer chuck configured to hold a wafer, and a first nozzle configured to dispense first chemical liquid onto the wafer. The semiconductor apparatus also includes a second nozzle configured to dispense second chemical liquid onto the wafer at a first dispensing time after the first nozzle stops dispensing the first chemical liquid. The semiconductor apparatus also includes an image device configured to take images of the first nozzle and the second nozzle in sequence, and a processing module configured to analyze the images. The processing module adjusts the first dispensing time when a first defect image shows the first chemical liquid and the second chemical liquid existing in a space close to the first and the second nozzles and flowing to the wafer.

Semiconductor apparatus and adjustment method

A baking apparatus for baking a wafer is provided. The baking apparatus includes a wafer chuck configured to hold the wafer, and a heating device disposed over the wafer chuck and configured to heat the wafer. The baking apparatus also includes a carrying arm configured to transport the wafer over the wafer chuck. The wafer chuck is in physical contact with the center area of the bottom surface of the wafer when the wafer is held by the wafer chuck.

Baking apparatus and method

System and method for replacing a resist filter in such a manner as to reduce filter-induced wafer defects are described. In one embodiment, the system comprises a filtration system connected to a dispenser, the filtration system comprising a filter; and a switch connected to the filter for selectively connecting the filtration system to throughput one of a first chemical solution and a second chemical solution.

System and method for replacing resist filter to reduce resist filter-induced wafer defects

A lithography cluster includes at least two lithography cells having a first lithography cell and a second lithography cell, an interface unit configured to integrate with the first lithography cell and the second lithography cell. The first lithography cell includes a first track and a first exposing tool and a second lithography cell includes a second track and a second exposing tool. The interface station includes a first interface buffer configured to couple the first track, a second interface buffer configured to couple the second track, a conveyor configured to couple the first interface buffer and the second interface buffer, and a robot configure to move along the conveyor, where in the robot transfers a substrate between functions of multiple functions within the first lithography cell, the second lithography cell, or between the first lithography cell and the second lithography cell.

Method of optimizing lithography tools utilization

The present disclosure provides a lithography apparatus. The apparatus includes an exposure module designed for exposure processing; a baking module embedded in the exposure module and designed for post exposure baking (PEB); and a control module designed to control the exposure module and the baking module.

PEB embedded exposure apparatus

A method and apparatus for adjusting exhaust flow, and the apparatus has a programmable exhaust control regulator generating a first input signal to a motor control circuit, an exhaust flow meter generating a second input signal to the motor control circuit and a motor driven control valve moved to different positions according to the first and second input signals, the control valve being installed in an exhaust portion of the hot plate apparatus.

Adjustable exhaust flow for thermal uniformity

An exhaust apparatus for evacuating vapor during baking of liquid chemicals deposited on substrates including a heating chamber containing a hot plate for horizontally supporting and heating a substrate. A cover plate is suspended horizontally over the hot plate; the cover plate has a plurality of exhaust ports extending from the top to its bottom surfaces. The ports are radially and evenly disposed midway between the periphery and a centered port with a manifold mounted to the top of the cover plate. The manifold has tubular conduits connected underneath to each exhaust port. Each conduit has an adjustable damper disposed at its front opening for regulating the vapor being exhausted. The tubular conduits converge from each exhaust port towards a common enclosure with an exhaust pipe coupled to its top for exhausting vapor to an external recovery facility.

Growing community of inventors

Baoshan Shiang, Taiwan

Yao-Hwan Kao