United Microelectronics Corp.

Yao-Hung Liu

Yen-Chen Chen

Li Li Ding

Hai Tao Liu

Chien-Ming Lai

Ding-Lung Chen

Hui-Ling Chen

Sheng-Yao Huang

Jen-Po Huang

Qinggang Xing

Chin-Fu Lin

Chun-Yuan Wu

Shouguo Zhang

Ming Hua Du

Xiao Wu

Hung-Yueh Chen

Guoan Du

Yi Yu Lin

Huakai Li

Qi Lu Li

Chunlei Wan

Yuchao Chen

Ruoh-Haw Chang

De-Can Liao

Hung-Yu Kuo

An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Oxide semiconductor field effect transistor

A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

Fabrication method of memory device

A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Semiconductor device

Method of forming oxide semiconductor field effect transistor

The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.

Structure of memory device and fabrication method thereof

Semiconductor device and method for fabricating the same

Oxide semiconductor field effect transistor and forming method thereof

The present invention provides a multi-conditioner arrangement of a CMP system. The CMP system according to the present invention comprises a polishing table, a polishing pad positioned on the polishing table, a plurality of carrier heads on the polishing pad functioning in holding semiconductor wafers, and a plurality of conditioners positioned between the two neighboring carrier heads on the polishing pad for recovering the surface texture of the polishing pad. Herein, a plurality of conditioners are in a one-to-one arrangement to a plurality of carrier heads, each conditioner producing a back and forth motion in a radiant direction. Therefore, the lifetime of the polishing pad is extended, the wafer-to-wafer difference is reduced, and spatial coverage is increased.

Multi-conditioner arrangement of a CMP system

Growing community of inventors

Tainan, Taiwan

Yao-Hung Liu