Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Boe Technology Groupco., Ltd.

Beijing Glyexo Gene Technology Co., Ltd.

Yanzhao Li

Long Wang

Feng Qu

Gang Wang

Zhuo Chen

Jie Sun

Yong Qiao

Tuo Sun

Yongchun Lu

Jingang Fang

Li Sun

Liye Duan

Feng Wang

Jiangbo Chen

Jingwen Guo

Hu Meng

Wei Liu

Dongfang Wang

Shuo Zhang

Chunsheng Jiang

Chao Zhou

Qianhong Wu

Hui Tian

Chunxin Li

Jian Zhou

Yao Lu

Boris Kristal

Li Ni Zhang

Wenbo Li

Fan Li

Chunwei Wu

Ze Liu

He Huang

Yuedi He

Zeyuan Li

Fanli Meng

Changcheng Ju

Wulin Shen

Chieh Hsing Chung

Yingli Shi

Hai Yu

Xiyuan Wang

Yafei Zhang

Wenhai Mei

Zongmin Liu

Zhenzhong Zhang

Feng Jiang

Haijing Chen

Jia Fang

Xiaoguang Xu

Yongchun Tao

Defeng Mao

Chiachiang Lin

Hui Hua

Chiehhsing Chung

Woobong Lee

Da Li

Chungchun Lee

Cuifang Zhang

Ding Ding

Yuanming Zhang

Jian Cui

Yang Zheng

Yulan Hu

Jingfei Fang

Sifan Wang

Changqing Lin

Hanjun Park

Qi Gao

Jindou Liu

Huai-Ting Shih

Chung-Chun Lee

Kun Hao

Zhihui Xu

Ruwang Guo

Longfei Li

Chung Chun Lee

Qijun Zha

Shuang Guan

Shuang Qie

Tiansheng Chen

Guangzhen Zhao

Provides are a phase shifter and a communication apparatus. The phase shifter includes a substrate; a signal transmission line on one side of the substrate; a first ground wire and a second ground wire on the same side of the substrate as the signal transmission line, the first and second ground wires are on two sides of the signal transmission line; and capacitance bridges on one side away from the substrate, of a layer where the signal transmission line is, the capacitance bridges are connected with the first and second ground wires, the capacitance bridges span the signal transmission line and are sequentially arrayed in an extension direction of signal transmission line, there is a gap between the capacitance bridges and the signal transmission line in a direction perpendicular to substrate, critical bias voltages are different when capacitance between the capacitance bridges and the signal transmission line reaches the maximum.

Phase shifter comprising a substrate having a signal line and ground wires, where capacitance bridges of different bending stiffness span the signal line

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

MEMS switch, preparation method thereof, and electronic apparatus

The present disclosure provides an unlocking control method, an unlocking control device, an electronic apparatus, and a computer-readable storage medium. The unlocking control method for the electronic apparatus includes: obtaining an unlocking touch input; in the case that a retention time of the unlocking touch input at any one of a plurality of target positions is greater than a predetermined time threshold, generating at least one vibration excitation in accordance with the retention time; and in the case that an unlocking control signal determined in accordance with the unlocking touch input matches a predetermined unlocking password, controlling the electronic apparatus to be unlocked. The unlocking control signal includes a touch sequence of the unlocking touch input with respect to the plurality of target positions and the quantity of vibration excitations generated at each target position.

Unlocking control method and device, electronic apparatus, and computer-readable storage medium

A linewidth measurement method includes: obtaining a target image of the line, the line including a first line segment; performing region connecting on an edge image or binary image of the target image to obtain a region connected image, the region connected image including a target connected region corresponding to a pattern of the line, and a pixel value of each pixel in the target connected region being different from that of each pixel outside the target connected region; determining a first edge point and a second edge point of the first line segment based on the region connected image; and determining a width of the first line segment according to the first edge point and the second edge point, and determining the width of the line according to the width of the first line segment.

Linewidth measurement method and apparatus, computing and processing device, computer program and computer readable medium

The disclosure provides a micro-electromechanical system switch and a communication device. The micro-electromechanical system switch includes: a substrate; a DC bias line, arranged on one side of the substrate; a first signal transmission line and a second signal transmission line, arranged on the same side of the substrate as the DC bias line; a cantilever beam, arranged on a side, away from the substrate, of a layer on which the first signal transmission line is located; and a fixing structure, arranged on the side, away from the substrate, of the layer on which the first signal transmission line is located and not in contact with the first signal transmission line, where the fixing structure connects the free end and the substrate.

Micro-electromechanical system switch and communication device

An antenna, a display substrate and a display device are provided in the present disclosure, wherein the antenna includes a first conductive layer (), a dielectric layer () and a second conductive layer () which are stacked; the first conductive layer () is provided with at least one slot (); the second conductive layer () includes at least one conductive structure (), the conductive structure () is a comb structure, the conductive structure () includes a first conductive element () and a plurality of second conductive elements (), the first conductive element () constitutes a comb back of the comb structure, and the plurality of second conductive elements () constitute comb teeth of the comb structure; at least one conductive structure () is disposed corresponding to at least one slot ().

Antenna, display substrate and display device

The present disclosure provides a thin film sensor and a manufacturing method thereof, and belongs to the technical field of sensors. The thin film sensor of the present disclosure has a plurality of conductive-wire regions intersecting each other, and a plurality of hollow-out parts defined by the plurality of conductive-wire regions; the thin film sensor includes: a base substrate; a plurality of conductive wires on the base substrate, with the conductive wires being in the conductive-wire regions one to one; and a functional structure on the base substrate, where the functional structure is configured to allow at least part of light, which is transmitted along a preset direction and enters the functional structure from the conductive wire-regions, to exit from the hollow-out parts, and the preset direction is a direction from the base substrate towards the conductive wires.

Thin film sensor and manufacturing method thereof

The present disclosure provides an ultrasonic transducer unit and a manufacturing method thereof. The ultrasonic transducer unit includes a substrate, a first electrode arranged on the substrate, an insulating layer arranged on the first electrode, a vibrating film arranged on the insulating layer, a closed cavity being between the vibrating film and the insulating layer, and a second electrode arranged on the vibrating film. The vibrating film is made of a photoresist. The ultrasonic transducer unit disclosed by the present disclosure adopts the photoresist as a material of the insulating layer and/or the vibrating film, so that the ultrasonic transducer unit with better performance can be obtained.

Ultrasonic transducer unit and manufacturing method thereof

An antenna unit, a manufacturing method thereof, a display device, and an electronic apparatus. The antenna unit includes a radiation main body, at least one feed line, and a plurality of grounding portions. The at least one feed line and the radiation main body are electrically connected, the radiation main body, the at least one feed line, and the plurality of grounding portions are provided in a same layer.

Antenna unit and manufacturing method thereof, display device, and electronic apparatus

A detection substrate and a ray detector are disclosed. The detection substrate includes a base substrate; a plurality of detection pixel circuits, located on the base substrate; a first passivation layer, located on the side, facing away from the base substrate, of the detection pixel circuits; a planarization layer, located on the side, facing away from the base substrate, of the first passivation layer, where the surface of the side, facing away from the first passivation layer, of the planarization layer is a plane; and a plurality of photosensitive devices; where the photosensitive devices are electrically connected to the detection pixel circuits in a one-to-one correspondence through vias penetrating through the first passivation layer and the planarization layer, and each photosensitive device includes a first portion and a second portion.

Detection substrate and ray detector

The present disclosure provides an active pixel sensor and a flat panel detector. The active pixel sensor includes: a light sensing device configured to convert light sensed by the light sensing device into charges and supply the charges to a floating diffusion node; an amplification sub-circuit configured to amplify a signal according to a potential at the floating diffusion node and output the amplified signal through the output terminal; an adjustment sub-circuit configured to adjust, in response to a first control signal, a conversion gain from an amount of the light sensed by the light sensing device to the potential at the floating diffusion node; and a read sub-circuit configured to transmit a voltage of the input terminal of the read sub-circuit to the output terminal of the read sub-circuit according to a scan signal provided by the scan line.

Active pixel sensor and flat panel detector

The disclosure provides a display panel and a display apparatus, and belongs to the field of display technology. The display panel includes a display backplane and an antenna structure; the display panel further includes a frequency selective surface on a side of the antenna structure close to a light exit surface of the display panel; the frequency selective surface is configured to transmit an electromagnetic wave with a specific frequency, so as to enhance a radiation gain of the antenna structure.

Display panel and display apparatus

A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.

Photodetector, display substrate, and method of manufacturing photodetector

A phase shifter and an antenna device are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs on the substrate, and a capacitance adjusting component. Two ground lines in a same pair of ground lines are on both sides of the signal line and spaced apart from the signal line, respectively. The capacitance adjusting component includes a film bridge, and both ends of the film bridge are on the two ground lines, respectively. The signal line is in a space enclosed by the film bridge and the substrate. The capacitance adjusting component is configured to adjust a capacitance between the film bridge and the signal line to a target capacitance when the capacitance adjusting component receives a bias voltage, and the target capacitance has a linear correlation with a magnitude of the bias voltage.

MEMS phase shifter including a signal line, ground lines and a film bridge formed on a substrate to provide for capacitive adjustment of the phase shifter

A mesh structure is provided. The mesh structure includes a first insulating layer; one or more mesh lines on a first side of the first insulating layer; and one or more protruding structures on a second side of the first insulating layer, the second side being opposite to the first side. An orthographic projection of a respective protruding structure on a projection plane containing a surface of the first insulating layer at least partially overlaps with an orthographic projection of a respective mesh line on the projection plane. A refractive index of the one or more protruding structures is greater than a refractive index of the first insulating layer.

Mesh structure in electronic device, touch control structure, display panel, method of enhancing light transmittance in display panel, and method of fabricating mesh structure

Growing community of inventors

Beijing, China

Yanzhao Li