Boe Technology Group Co., Ltd.

Ordos Yuansheng Optoelectronics Co., Ltd.

Yanyan Meng

Feng Li

Lei Li

Jun Fan

Yezhou Fang

Lei Yan

Wei Li

Zhixuan Guo

Lei Yao

Lin Hou

Jinfeng Wang

Yusheng Liu

Chenglong Wang

Jinjin Xue

A thin film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin film transistor includes an active layer, a gate insulating layer, and a gate electrode; the gate insulating layer is located on one side of the active layer; the gate electrode is located on one side of the gate insulating layer distant from the active layer; the gate electrode includes an opening a part of the active layer overlapped with the opening includes a first lightly doped region, a first heavily doped region, and a second lightly doped region that are sequentially arranged along a first direction parallel to a plane where the active layer is located.

Thin film transistor and manufacturing method therefor, array substrate, and display device

The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor includes: an active layer located on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source penetrating through the first interlayer dielectric layer, and connected to the active layer; a second interlayer dielectric layer located on one side of the first interlayer dielectric layer away from the active layer and covering the source; and a drain, wherein the drain comprises a first portion penetrating through the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.

Thin film transistor and method for manufacturing the same, array substrate and display device

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Beijing, China

Yanyan Meng