Globalfoundries Singapore Pte. Ltd.

Yanxia Shao

Soh Yun Siah

Yu Jau Chen

Handoko Linewih

Siow Lee Chwa

Yudi Setiawan

Huajun Liu

Yoke Leng Lim

Chengang Feng

Wanbing Yi

Yung Fu Chong

Curtis Chun-I Hsieh

Rui Tze Toh

Xuesong Rao

Kemao Lin

Wensheng Deng

Liu Xinfu

Shucheng Yin

Jason Kin Wei Wong

Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the gate body. The air gap reduces the capacitance between a transistor gate in a device layer and adjacent wires and vias used to contact the source and drain of the transistor.

Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method

The present disclosure relates to semiconductor structures and, more particularly, to an integrated thin film resistor with a metal-insulator-metal capacitor and methods of manufacture. The structure includes: a first buffer contact on a substrate; a second buffer contact on the substrate, the second buffer contact being on a same wiring level as the first buffer contact; a resistive film contacting the first buffer contact and the second buffer contact, the resistive film extending on the substrate between the first buffer contact and the second buffer contact; and electrical contacts landing on both the first buffer contact and the second buffer contact, but not directly contacting with the resistive film.

Integrated thin film resistor and metal-insulator-metal capacitor

According to various embodiments, a semiconductor device may include a thin film arranged within a first inter-level dielectric layer, a masking region, and a contact plug. The masking region may be arranged over the thin film, within the first inter-level dielectric layer. The masking region may be structured to have a higher etch rate than the first inter-level dielectric layer. The contact plug may extend along a vertical axis, from a second inter-level dielectric layer to the thin film. A bottom portion of the contact plug may be surrounded by the masking region. The bottom portion of the contact plug may include a lateral member that extends along a horizontal plane at least substantially perpendicular to the vertical axis. The lateral member may be in contact with the thin film.

Thin film based semiconductor devices and methods of forming a thin film based semiconductor device

Fabrication of a slim split gate cell and the resulting device are disclosed. Embodiments include forming a first gate on a substrate, the first gate having an upper surface and a hard-mask covering the upper surface, forming an interpoly isolation layer on side surfaces of the first gate and the hard-mask, forming a second gate on one side of the first gate, with an uppermost point of the second gate below the upper surface of the first gate, removing the hard-mask, forming spacers on exposed vertical surfaces, and forming a salicide on exposed surfaces of the first and second gates.

Method of forming split-gate cell for non-volative memory devices

Growing community of inventors

Singapore, Singapore

Yanxia Shao