Ball Semiconductor Corporation

New Jersey Institute of Technology

Yanwei Zhang

Ivan Herman Murzin

Changfeng Xia

Robert B Marcus

An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.

Plasma immersion ion processor for fabricating semiconductor integrated circuits

A micromachined element mounted to a substrate, the element including a cantilever having a proximal portion attached to the substrate and a coilable distal portion terminating in a free distal end. The coilable distal portion, upon being heated, is capable of bending away from the substrate and at least partially coiling upon itself to form a coiled portion. At least part of the micromachined element may be electrically conductive. In various embodiments, the micromachined element may function as a mechanical microspring, an electrically conductive link, and/or a magnetic coil. A method of fabricating the microelement may include the steps of selectively depositing various layers upon the substrate.

Micromachined element and method of fabrication thereof

An apparatus and method for performing thermal diffusion on the substrate of a device such as a spherical shaped semiconductor. To this end, one embodiment provides an enclosure containing a plurality of apertures and a plasma chamber. A plasma generator for producing a plasma torch is incorporated with the plasma chamber, the plasma generator including a conductor coil electrically connected to a radio frequency energy generator. A first conduit registering with a first opening in the enclosure allows the semiconductor devices to be received into the plasma chamber. A second conduit registering with a second opening in the enclosure allows the semiconductor devices to exit the plasma chamber. Processing fluids are injected into the plasma chamber so that a doping material from the process fluid is ionized at an upper portion of the plasma torch to form a high density diffusion plasma. This high density diffusion plasma supports a quick and uniform diffusion of the doping material into the substrate of the semiconductor devices.

High temperature plasma-assisted diffusion

Plasma immersion ion processor for fabricating semiconductor integrated

An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where they are further heated by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

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Plano, TX, United States of America

Yanwei Zhang