University of Illinois

University of Llllinois

Yansong Yang

Songbin Gong

Ruochen Lu

Liuqing Gao

Tomas Manzaneque Garcia

Shibin Zhang

Steffen Link

Brandon Arakawa

Justin Postma

An acoustic resonator includes a piezoelectric thin film (PTF) disposed on a carrier substrate. The PTF confines a fundamental shear-horizontal (SH0) surface-acoustic wave (SAW) within the PTF. The acoustic resonator includes an input bus line coupled to an input source and a ground bus line coupled to a ground potential. The acoustic resonator includes a first grating reflector disposed at a first end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes a second grating reflector disposed at a second end of the PTF and coupled between the input bus line and the ground bus line. The acoustic resonator includes interdigital transducers (IDTs) disposed between the first grating reflector and the second grating reflector. Each IDT includes an input electrode coupled to the input bus line, and a ground electrode coupled to the ground bus line.

Surface acoustic wave devices using piezoelectric film on silicon carbide

A piezoelectric thin film suspended above a carrier substrate is adapted to propagate an acoustic wave in a Lamb mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A first signal electrode is located on the piezoelectric thin film and oriented in a transverse direction perpendicular to the longitudinal direction. A first ground electrode is located on the piezoelectric thin film and oriented in the transverse direction. The first ground electrode is separated from the first signal electrode by a gap in which the acoustic wave resonates. A first release window and a second release window are located at a first end and a second end of the piezoelectric thin film, respectively. Intermittent release windows are located beyond distal ends of the first signal electrode and the first ground electrode.

Fifth-generation (5G)-focused piezoelectric resonators and filters

A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be X-cut LiNbOthin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal.

Low-loss and wide-band acoustic delay lines using x-cut and y-cut lithium niobate piezoelectric thin films

An apparatus includes a piezoelectric thin film suspended above a carrier substrate, where the piezoelectric thin film is of one of lithium niobate (LiNbO) or lithium tantalate (LiTaO) adapted to propagate an acoustic wave in a Lamb wave mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A signal electrode is disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction. A ground electrode disposed on, and in physical contact with, the piezoelectric thin film and oriented perpendicular to the longitudinal direction, where the ground electrode is separated from the signal electrode by a gap comprising a longitudinal distance and in which the acoustic wave resonates. A release window is formed within the piezoelectric thin film adjacent to the ground electrode.

Acoustic resonators and filters that support fifth generation (5G) wireless communications standards

A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be Z-cut LiNbOthin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.

Low-loss and wide-band acoustic delay lines using Z-cut lithium niobate piezoelectric thin films

An inductive wireless power transfer apparatus includes a source coil coupled to a power source such that current flows through the source coil when the source coil is excited by the power source. The apparatus further includes a first capacitor coupled in series to the source coil. The apparatus further includes an intermediate coil surrounding the source coil and positioned within an identical plane as the source coil, and a second capacitor coupled in series to the intermediate coil. The capacitances of the first capacitor and the second capacitor are set to tune out self-inductances of the source coil and the intermediate coil. In embodiments, the source coil is to inductively power the intermediate coil, which is to inductively power a load coil positioned a distance away from the intermediate coil.

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Urbana, IL, United States of America

Yansong Yang