Chinese Academy of Sciences

Yanqin Wang

Xiangang Luo

Zeyu Zhao

Mingbo Pu

Ping Gao

Changtao Wang

Xiaoliang Ma

Xiong Li

Chengwei Zhao

Yinghui Guo

Yunfei Luo

Min Wang

Kaipeng Liu

Tiancheng Gong

Weijie Kong

Jiayu He

Ling Liu

Na Yao

Yanwu Chu

Chenggang Hu

Guiyuan Jia

Cheng Huang

Yiyun Zhang

Leilei Yang

Liqin Liu

Jiong Wang

Cheng Haung

The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.

Ultra-large area scanning reactive ion etching machine and etching method thereof

Provided are an F-P sensor probe, an absolute distance measurement device, and an absolute distance measurement method, which relate to the field of non-contact absolute distance measurement technologies. This structure includes a first N+1-core multimode optical fiber probe (), an optical fiber sleeve (), an imaging lens group (), and a reference lens (), wherein: the first N+1-core multimode optical fiber probe (), the imaging lens group (), and the reference lens () are sequentially fixed inside the optical fiber sleeve () along a direction of the F-P sensor probe toward a sample (); and the first N+1-core multimode optical fiber probe () includes N first multimode optical fibers () and one second multimode optical fiber (), where N≥2, and the N first multimode optical fibers () are arranged around the second multimode optical fiber ().

F-P sensor probe, absolute distance measurement device, and absolute distance measurement method

Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Near-field lithography immersion system, immersion unit and interface module thereof

The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.

Secondary imaging optical lithography method and apparatus

The present disclosure proposes an apparatus for coating photoresist and a method for coating photoresist. The apparatus for coating photoresist comprises a gas supply unit () configured to supply gas to a photoresist application unit (); wherein the photoresist application unit () comprises: a device cavity () enclosed by sidewalls, a bottom plate and a cover plate (), a rotation platform () configured to carry a substrate () and bring the substrate to rotate; a guide unit conformal with the substrate, and configured to uniformly blow the gas supplied by the gas supply unit over a surface of the substrate on which the photoresist is coated; and a gas extraction unit () configured to extract gas from the device cavity (). The present disclosure realizes uniformly and rapidly coating the photoresist on a large substrate.

Methods and apparatuses for coating photoresist

Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may include an illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP) wave illumination mode.

Super-resolution imaging photolithography

Growing community of inventors

Sichuan, China

Yanqin Wang