Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Yannick Veschetti

Jean-Paul Garandet

Nicolas Chaintreuil

Philippe Thony

Armand Bettinelli

Eric Pilat

Luc Federzoni

Stéphane Guillerez

Julien Gaume

Bruno Remiat

Thomas Guerin

Annalaura Fasiello

Paul Messaoudi

David Bertrand

François Quesnel

The invention relates to a lightweight photovoltaic module () comprising: a transparent first layer () forming the front face, photovoltaic cells (), an assembly () encapsulating the photovoltaic cells (), and a second layer (), the encapsulating assembly () and the photovoltaic cells () being arranged between the first () and the second () layer. The invention is characterised in that the first layer () comprises a polymer material and has a thickness (e) of less than 50 &#x3bc;m, in that the second layer () comprises at least one composite material of the prepreg type containing polymer resin and fibres and has a areal weight of less than 150 g/m, and in that the encapsulating assembly () has a maximum thickness (e) of less than 150 &#x3bc;m.

Lightweight and flexible photovoltaic module comprising a front layer consisting of a polymer and a rear layer consisting of a composite material

The present invention relates to a method for manufacturing a monolithic silicon wafer () comprising multiple vertical junctions () having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath () including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers () and p-doped silicon layers (); and (iii) cutting a slice (), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer ().

Method for manufacturing a monolithic silicon wafer comprising multiple vertical junctions

A method of producing a photovoltaic cell. A passivation layer based on an intrinsic amorphous semiconductor is deposited on a back surface of a substrate based on a crystalline semiconductor. A first sacrificial mask including at least one through-opening on the passivation layer is screen-printed at a temperature less than or equal to 250&#xb0; C. A doped amorphous semiconductor layer of a first type of conductivity is deposited at least in the opening. The first sacrificial mask is removed, leaving at least one doped amorphous semiconductor pad of the first type of conductivity remaining at the opening of the first sacrificial mask.

Method of producing a photovoltaic cell with a heterojunction on the rear face

Method for producing doped regions on the rear face of a photovoltaic cell. A doping paste with a first type of conductivity is deposited on a rear face of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity. Then, an oxide layer is deposited at least on the portions of the rear face of the substrate not covered with the doping paste. Finally, an annealing of the substrate diffuses the doping agents in the substrate and forms doped regions under the doping paste.

Method for producing doped regions in a substrate, and photovoltaic cell

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Saint Clair la Tour, France

Yannick Veschetti