Infineon Technologies Ag

Infineon Technologies North America Corp.

Yannick Martelloni

Gunther Lehmann

Siddharth Gupta

Jean-Yves Larguier

Thomas Nirschl

Martin Ostermayr

Sabeen Randhawa

Mario Di Ronza

Rod G Fleck

Rami Zemach

Doron Shoham

Steffen Paul

Devesh Dwivedi

Bernhard Wicht

Gigy Baror

Peter Huber

Klaus J Oberlaender

Niv Margalit

Volker Sch&ouml;ber

Volker Schöber

Klaus Oberl&auml;nder

Paolo Ienne

Laurent Gaziello

Manfred Henftling

Gupta Siddharth

Zohar Peleg

Oded Trainin

Christian Wiedholz

Siddarth Gupta

A read-out circuit for or in a ROM memory, comprises an input, a comparator circuit, a threshold setting, and a control signal generator for driving the threshold setting generator. A read signal can be coupled into the input. The read signal, depending on the information contained in the read signal, comprises a high signal level relative to a reference potential or a low signal level relative to a reference potential. The comparator circuit compares the read signal with a settable threshold, the threshold setting circuit is designed for setting the threshold of the comparator circuit relative to the high and low signal levels, and the control signal generator generates a control signal similar to the read signal.

Read-out circuit for or in a ROM memory; ROM memory and method for reading the ROM memory

The invention relates to a ROM memory cell comprising a first terminal connected to a word line, comprising a second terminal and comprising a third terminal, the second terminal being connected to a bit line and/or the third terminal being connected to a supply line for precharging the third terminal. The ROM memory cell according to the invention is distinguished by the fact that the same reference potential is in each case applied to the first terminal, the second terminal and/or the third terminal in a standby operating mode. The invention furthermore relates to a ROM memory component comprising such ROM memory cells, and to a method for reading from the ROM memory cell.

ROM memory component featuring reduced leakage current, and method for writing the same

A method for repairing a memory comprising a Memory Built-In Self Repair (MBISR) structure comprises the steps of detection of defective storage cells, and redundancy allocation. The redundancy allocation step is carried out in such a way that it combines a row and/or column oriented redundancy repair approach with a word oriented redundancy repair approach. A Memory Built-In Self Repair (MBISR) device comprises at least one memory () with row and/or column redundancy, at least one row and/or column Memory Built-In Self Repair (MBISR) circuit (), and a word redundancy block (). Furthermore, a distributed MBISR structure as well as dedicated Column/Row MBISR circuits () are provided.

Memory built-in self repair (MBISR) circuits/devices and method for repairing a memory comprising a memory built-in self repair (MBISR) structure

A memory cell includes transistors and two read ports. Each read port is configured to be connected to a read line. The memory cell is configured such that in a read operation of the memory cell an information stored in the memory cell is readable by a differential reading including an evaluation of an electric current between the two read ports.

Memory cell, read device for memory cell, memory assembly, and corresponding method

A memory arrangement, particularly a ROM, having memory cells, local virtual supply voltage lines, word lines and result lines may also include global virtual supply voltage lines that run along the width of the memory arrangement parallel to the word lines. The local virtual supply voltage lines run parallel to the result lines, and perpendicularly to the word lines where the each local virtual supply voltage line runs only within a block of the memory arrangement. Each global virtual supply voltage line, in each block through which it runs, is connected to one local virtual supply voltage line. The coupling capacitance between the supply voltage lines and the result lines, and the inherent capacitance of the supply voltage lines are reduced, reducing the power consumption and increasing the clock frequency of the memory arrangement.

Memory arrangement with low power consumption

An SRAM memory cell has at least one memory node and at least one selection transistor, which is electrically connected to the memory node, a first bit line and a first word line. Furthermore, the SRAM memory cell has means for compensating for a leakage current flowing into the SRAM memory cell. The means are designed in such a way that a current corresponding to the leakage current flows into the SRAM memory cell. In one exemplary embodiment, the means are formed as a transistor which is electrically connected to the first bit line and the second memory node, the first memory node being connected to the selection transistor.

SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell

A method supplies voltage to a bit line of a memory device. The method includes precharging, with a precharging device, the bit line to an output potential, deactivating the precharging device during a read action related to the bit line, reading, during the read action, an information via the bit line, and routing, during the read action, a virtual voltage supply line to a supply potential of the memory device to supply voltage to memory cells of the memory device assigned to the bit line. The precharging device of the bit line is activated/deactivated as a function of the potential of the virtual voltage supply line.

Supplying voltage to a bit line of a memory device

It is proposed that bitline inversion coding data be integrally stored in the structure of a column multiplexer of a storage device. For this purpose, connections to a predefined potential are selectively provided at connection points, which are respectively assigned to one of the bitlines connected to the column multiplexer, in dependence on whether or not the assignment of a first state and of a second state of memory cells, connected to the bitline, to a binary value '0' and to a binary value '1' is inverted for the respective bitline. The connection points are connected to a common nodal point via switching means. The switching means are activated through control signals of the column multiplexer. Selection signals for activating inverter means, in order to effect a selective inversion of values read out from the memory cells, are generated in dependence on the signal level at the common nodal point. A precharging of the common nodal point is preferably effected between to read-out operations in each case, for which purpose precharging switching means are provided.

Method and storage device for the permanent storage of data

An integrated memory and method for testing an integrated memory is provided herein. In order to test an integrated memory having a main data memory with a plurality of data memory units, a data memory unit is addressed and input test data for testing the addressed data memory unit are applied to the main data memory. The output test data are read out from the main data memory and compared with expected desired output test data in a self-test unit. Deviations detected during the comparison are buffer-stored in a redundancy analysis memory. These information items buffer-stored in the redundancy analysis memory are read out and transferred to a computing unit. In the computing unit, the defect positions in the output test data are identified, and a repair strategy is determined by means of redundant rows and/or redundant columns and/or redundant words provided. The redundant words required for the repair strategy are written to the redundancy analysis memory and activated.

Integrated memory and method for testing an integrated memory

A circuit (S) for switching on an electrical load which can be connected downstream from the circuit comprises a first electronic switching means (T) in a first path, and a second electronic switching means (T) in a second path, which is in parallel with it. The circuit also has a means (INV, OR, T) for producing the electrical control variable (U) for the second switching means (T), which determines the control variable (U) as a function of an electrical variable (U) which occurs on the output side of the first switching means (T) when switching on a load which can be connected downstream.

Circuit and method for switching an electrical load on after a delay

A read-only memory arrangement and method for programming the memory arrangement are provided. The memory arrangement includes memory cells, which each have a transistor with two contacts and a control terminal, address lines, bit lines and a potential line. A combination of one of the address lines and one of the bit lines is uniquely assigned to each memory cell. The control terminal of each transistor is connected to the address line assigned to the respective memory cell. To program a memory cell into a first memory state, one of the contacts of the transistor of the memory cell is connected to the assigned bit line and the other of the contacts is connected to the potential line. To program a memory cell into a second memory state, no connections are established between the contacts of the transistor and either the assigned bit line or the potential line.

Method for programming a memory arrangement and programmed memory arrangement

The testable read-only memory for data memory redundant logic has read-only memory units for storage of determined fault addresses of faulty data memory units. The serviceability of each read-only memory unit can be checked by application of input test data and by comparison of read output test data with expected nominal output test data.

Testable read-only memory for data memory redundant logic

An interface circuit for coupling a data handling unit with a memory unit having control inputs, an address signal input, a data signal input, and a data signal output is described. The interface circuit comprises an address buffer having an input and an output, said input receiving an address signal from said data handling unit, a first multiplexer which couples said memory unit with either said output of said address buffer or with said address signal, a data buffer having an input and an output, said input receiving a data signal from said data handling unit and said output being coupled with said memory data input, a second multiplexer for selecting either said memory data signal output or said data buffer output, and a comparator for comparing said address signal with the signal from said address buffer output, generating a control signal which controls said second multiplexer.

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Poing, Germany

Yannick Martelloni