Stmicroelectronics(tours) Sas

Stmicroelectronics International N.v.

Stmicroelectronics Asia Pacific Pte Limited

Universite Francois Rabelais Ufr Sciences Et Techniques

Stmicroelectronics (rousset) Sas

Yannick Hague

Romain Launois

Samuel Menard

Romain Pichon

Gaël Gautier

Benoit Renard

Sean Choi

Guillaume Thiennot

Disclosed herein is a voltage converter including input nodes configured to receive an input voltage, output nodes configured to deliver an output voltage, a rectifying bridge coupled between the input nodes and the output nodes, a capacitor and a resistor series-coupled between the output nodes, and a thyristor coupled between one terminal of the resistor and a given one of the output nodes, wherein the thyristor is configured to allow flow of a positive current from the resistor to the given one of the output nodes. A control input is configured to receive a control signal, wherein the control signal biases a gate of the thyristor to control the flow of current through the thyristor. transient voltage suppressor circuit is coupled to the gate of the thyristor, configured to activate the thyristor upon exceeding a threshold voltage.

Voltage converter

A bidirectional PFC system includes a high-frequency branch with a first transistor connected between an IO node and a high-frequency tap, and a second transistor connected between the high-frequency tap and a reference node, and a low-frequency branch with a first thyristor connected between the IO node and a low-frequency tap, and a second thyristor connected between the low-frequency tap and the reference node. An inductor is connected between the first node and the high-frequency tap. A first capacitor is connected between the first node and the low-frequency tap. The first node and the low-frequency tap are coupled to input terminals. A control circuit generates first and second gate drive signals for the transistors so as to modify an AC signal at the input terminals such that the AC current falls below a holding current of the second thyristor prior to zero crossing of the AC voltage.

Commutation assistance by controlling the shape of the current wave in a bidirectional totem pole converter

A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.

Thyristor control device

A converter includes first and second transistors coupled between first and second nodes, and first and second thyristors coupled between the first and second nodes. The converter is controlled for operation to: in first periods, turn the first transistor and second thyristor on and turn the second transistor and the first thyristor off, and in second periods, turn the first transistor and the second thyristor off and turn the second transistor and the first thyristor on. Further control of converter operation includes, for a third period following each first period, turning the first and second transistors off, turning the second thyristor off, and injecting a current into the gate of the first thyristor. Additional control of converter operation includes, for a fourth period following each second period, turning the first and second transistors off, turning the first thyristor off, and injecting a current into the gate of the second thyristor.

Voltage converter with thyristor gate controlled to conduct a reverse current

A voltage converter includes a circuit formed by a parallel association, connected between first and second nodes, of a first branch and a second branch. The first branch includes a first controlled rectifying element having a first impedance. The second branch includes a resistor associated in series with a second rectifying element having a second impedance substantially equal to the first impedance. The second rectifying element may, for example, be a triac having its gate coupled to receive a signal from an intermediate node in the series association of the second branch. Alternatively, the second rectifying element may be a thyristor having its gate coupled to receive a signal at the anode of the thyristor.

A voltage converter delivers an output voltage between a first and a second node. The voltage converter includes a capacitor series-coupled with a resistor between the first and second nodes. The resistor is coupled in parallel with a bidirectional switch receiving at its control terminal a positive bias voltage referenced to the second node.

A circuit includes two input nodes and two output nodes. A rectifier bridge is coupled to the input and output nodes. The rectifier bridge includes a first and second thyristors and a third thyristor coupled in series with a resistor in series. The series coupled third thyristor and resistor are coupled in parallel with one of the first and second thyristors. The first and second thyristors are controlled off, with the third thyristor controlled on, during start up with resistor functioning as an in in-rush current limiter circuit. In normal rectifying operation mode, the first and second thyristors are controlled on, with the third thyristor controlled off.

Rectifier bridge

Transient overvoltage suppression is provided by discharging through a Metal Oxide Varistor (MOV) and Silicon Controlled Rectifier (SCR) which are connected in series between power supply lines. The SCR has a gate that receives a trigger signal generated by a triggering circuit coupled to the power supply lines. A trigger voltage of the triggering circuit is set by a Transil&#x2122; avalanche diode.

Low leakage transient overvoltage protection circuit using a series connected metal oxide varistor (MOV) and silicon controlled rectifier (SCR)

A switch includes three components. Each component includes a stack of three semiconductor regions of alternating conductivity types and a control region in a first of the three semiconductor regions having a type opposite to that of the first semiconductor region. The first semiconductor regions of the first and second components are of a same conductivity type and the first semiconductor regions of the first and third components are of opposite conductivity types. The first semiconductor region of the first component is connected to the control regions of the second and third components. The first semiconductor regions of the second and third components are connected to a first switch terminal, the third semiconductor regions of the first, second, and third components are connected to a second switch terminal, and the control region of the first component is connected to a third switch terminal.

Bidirectional power switch

A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor. The gates of the first and second thyristors are coupled to a same control terminal of the switch by respective dipole circuits. At least one of the dipole circuits is formed by at least one diode or at least one resistor.

Bidirectional power switch with improved switching performance

A gate amplification triac including in a semiconductor substrate of a first conductivity type a vertical triac and a lateral bipolar transistor having its emitter connected to the triac gate, its base connected to a control terminal, and its collector connected to a terminal intended to be connected to a first reference voltage, the main terminal of the triac on the side of the transistor being intended to be connected to a second reference voltage, the transistor being formed in a first well of the second conductivity type and the triac comprising on the transistor side a second well of the second conductivity type, the first and second wells being formed so that the substrate-well breakdown voltage of the transistor is greater than the substrate-well breakdown voltage of the triac by at least the difference between the first and second reference voltages.

Gate amplification triac

A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.

Vertical power component

A Shockley diode including: a vertical stack of first to fourth layers of alternated conductivity types between first and second electrodes; a recess formed in the fourth layer and extending vertically to penetrate into the second layer; a first region of same conductivity type as the second layer but of greater doping level, extending at the bottom of the recess in the second layer; and a second region of same conductivity type as the third layer but of greater doping level, extending along the lateral walls of the recess and connecting the first region to the fourth layer.

Growing community of inventors

Mettray, France

Yannick Hague