Soitec

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Yann Sinquin

Jean-Marc Bethoux

Damien Radisson

Oleg Kononchuk

Didier Landru

Ionut Radu

Alexandre Reinhardt

Jean-Sebastien Moulet

Carole David

Alexis Drouin

Isabelle Huyet

Jean-Sébastien Moulet

Guillaume Besnard

Lucianna Capello

Thu Trang Vo

A method for producing a composite silicon carbide structure comprises:

Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on a carrier substrate of polycrystalline SiC

The invention relates to a SAW resonator () comprising at least: a substrate (); a layer () of piezoelectric material arranged on the substrate; a first attenuation layer () arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (), a second attenuation layer () arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

Saw resonator comprising layers for attenuating parasitic waves

A method for separating a removable composite structure using a light flux includes supplying the removable composite structure, which successively comprises: a substrate that is transparent to the light flux; an optically absorbent layer for at least partially absorbing a light flux; a sacrificial layer adapted to dissociate subject to the application of a temperature higher than a dissociation temperature and made of a material different from that of the optically absorbent layer; and at least one layer to be separated. The method further includes applying a light flux through the substrate, the light flux being at least partly absorbed by the optically absorbent layer, so as to heat the optically absorbent layer; heating the sacrificial layer by thermal conduction from the optically absorbent layer, up to a temperature that is greater than or equal to the dissociation temperature; and dissociating the sacrificial layer under the effect of the heating.

Method for separating a removable composite structure by means of a light flux

A method for adjusting the stress state of a piezoelectric film having a first stress state at room temperature includes a step of forming an assembly including a carrier having a thermal expansion coefficient, a compliant layer placed on the carrier, and the piezoelectric film placed on the compliant layer, the piezoelectric film having a thermal expansion coefficient different from that of the carrier. The method also includes a step of heat treating the assembly, in which the assembly is heated to a treatment temperature above the glass transition temperature of the compliant layer. The present disclosure also relates to a process for fabricating an acoustic wave device comprising the piezoelectric layer the stress state of which was adjusted as described herein.

Method for adjusting the stress state of a piezoelectric film and acoustic wave device employing such a film

A method for separating a structure from a substrate through electromagnetic irradiations (EI) belonging to a spectral range comprises the steps of a) providing the substrate, b) forming an absorbent separation layer on the substrate, c) forming the structure to be separated on the separation layer, d) exposing the separation layer to the electromagnetic irradiations (EI) via the substrate such that the separation layer breaks down under the effect of the heat stemming from the absorption, the method being notable in that it comprises a step b1) of forming a transparent thermal barrier layer on the separation layer, the exposure period and the thickness of the thermal barrier layer being adapted such that the temperature of the structure to be separated remains below a threshold during the exposure period, beyond which threshold, faults are likely to appear in the structure.

Process, stack and assembly for separating a structure from a substrate by electromagnetic radiation

The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

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Grenoble, France

Yann Sinquin