Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Yann-Michel Niquet

Maud Vinet

Louis Hutin

Sylvain Barraud

Jean Charbonnier

Benoit Bertrand

Candice Thomas

Hélène Jacquinot

Thomas Bedecarrats

Leo Bourdet

Ivan Duchemin

Biel Martinez I Diaz

Léo Bourdet

A spin qubit quantum device includes a semiconductor portion having a first region disposed between two second regions; a first control gate disposed in direct contact with the first region and configured to control a minimum potential energy level in the first region, and disposed in direct contact with a first face of the semiconductor portion; and second electrostatic control gates, each disposed in direct contact with one of the second regions and configured to control a maximum potential energy level in one of the second regions, and disposed in direct contact with a second face, opposite to the first face, of the semiconductor portion, The first gate is not aligned with the second gates.

Device comprising electrostatic control gates distributed on two opposite faces of a semiconductor portion

A quantum device, includes a semiconductor portion comprising several first quantum dot regions each disposed between at least two second tunnel barrier regions and placed next to the two second regions; first gates each comprising a first conductive portion; and second gates each comprising at least a second conductive portion and a second dielectric disposed between the second conductive portion and the first conductive portion of one of the first gates, such that each of the first gates is disposed between the semi-conductor portion and one of the second gates. The first and second gates are disposed above the first regions or above the second regions, the second gates being solely located in a vertical extension of the first gates.

Device with two superposed electrostatic control gate levels

A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g&#xb7;&#x3bc;&#xb7;B&#x3e;min(&#x394;(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that &#x394;(Vbg)&#x3c;g&#xb7;&#x3bc;&#xb7;B+2|M|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Land&#xe9; factor, &#x3bc;corresponding to a Bohr magneton, &#x394; corresponding to an intervalley energy difference in the semiconducting portion, and Mcorresponding to the intervalley spin-orbit coupling.

Method for controlling a spin qubit quantum device

Single-electron transistor comprising at least:

Single-electron transistor and its fabrication method

Growing community of inventors

Saint Martin le Vinoux, France

Yann-Michel Niquet