Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (rousset) Sas

Yann Beilliard

Lea Di Cioccio

Léa Di Cioccio

Method of assembly of a first element (I) and a second element (II) each having an assembly surface, at least one of the assembly surfaces comprising recessed metal portions () surrounded by dielectric materials () comprising: A) a step to bring the two assembly surfaces into contact without application of pressure such that direct bonding is obtained between the assembly surfaces, said first and second assemblies (I, II) forming a stack with a given thickness (e), B) a heat treatment step of said stack during which the back faces () of the first (I) and the second (II) elements are held in position so that they are held at a fixed distance (E) between the given stack thickness+/&#x2212;2 nm.

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Upie, France

Yann Beilliard