Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Yann Beilliard

Pierre Bar

Sandrine Lhostis

Olga Kokshagina

Vincent Fiori

Simon Gousseau

A device includes a support, a three-dimensional integrated structure above the support, and a lateral encapsulation region arranged around the structure. The lateral encapsulation region includes first channels configured to make it possible to circulate a cooling fluid.

Device comprising a three-dimensional integrated structure with simplified thermal dissipation, and corresponding fabrication method

A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.

Process for producing at least one through-silicon via with improved heat dissipation, and corresponding three-dimensional integrated structure

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La Tronche, France

Yann Beilliard