Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Fudan University

Yanhua Wu

Jisong Jin

Junling Pang

Long Yu

Lisha Tang

Jia Ni

Guoqing Ji

Zejun He

Dingding Han

A semiconductor device and its fabrication method are provided. The method includes providing a layer to be etched; forming a first mask layer on the layer to be etched; forming a first trench and a second trench in the first mask layer; forming a blocking layer over the first mask layer, where a portion of the blocking layer is formed in a first portion of the first trench and a first portion of the second trench; forming a first dividing layer in a first blocking opening to divide the first trench along a first direction; when forming the first dividing layer, forming second dividing layers on two sidewalls of a second blocking opening and arranged along the first direction, where the second dividing layers divide the second trench along the first direction; and after forming the first dividing layer and the second dividing layers, removing the blocking layer.

Semiconductor device and fabrication method thereof

A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a layer to-be-etched including a first sub-trench region and a second sub-trench region. The method also includes forming a first mask layer over the layer to-be-etched and a second mask layer over the first mask layer, and forming a first sub-trench disposed over the first sub-trench region in the second mask layer. In addition, the method includes forming a first divided trench in the first mask layer and forming a second sub-trench disposed over the second sub-trench region in the second mask layer. Further, the method includes forming a first divided filling layer in the first divided trench, and forming a first middle trench in the first mask layer. The first divided filling layer divides the first middle trench in a second direction.

The present invention relates to a RTN4B-related polypeptide, a monoclonal antibody thereof, a monoclonal antibody-producing hybridoma cell strain, and, preparation and applications thereof. The RTN4B polypeptide comprises an amino acid sequence presented by SEQ ID NO: 1. The invention further discloses a monoclonal antibody, a hybridoma cell strain to produce the monoclonal antibody prepared by the RTN4B polypeptide, and the related application in the treatment or prevention of tumors thereof.

RTN4B polypeptide, monoclonal antibody thereof, monoclonal antibody-producing hybridoma cell strain, and, preparation and application thereof

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Shanghai, China

Yanhua Wu