Shenzhen China Star Optoelectronics Technology Co., Ltd.

Yangling Cheng

Hsiangchih Hsiao

Chang-I Su

A manufacturing method of a flexible display is provided, which comprises steps of forming an silicon layer on a rigid substrate, forming a frame-type silicon layer from the silicon layer, attaching a flexible substrate onto the surface of the rigid substrate on which the frame-type amorphous silicon layer is formed, forming a display film on the flexible substrate, and dehydrogenating the frame-type silicon layer after the formation of the display film is complete, so that the flexible substrate is separated from the frame-type silicon layer for obtaining the flexible display. The manufacturing method of the flexible display prevents the problem of low yield rate caused by the damage to the plastic substrate in the separation process.

Manufacturing method of a flexible display

The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor.

Method for manufacturing thin-film transistor and thin-film transistor manufactured with same

The present invention discloses a liquid crystal panel, liquid crystal display device and manufacturing method of array substrate thereof. The liquid crystal panel comprises: a color filter substrate and an array substrate, disposed with spacing, surface of array substrate facing color filter substrate being disposed with a plurality of pixel units, each of pixel units comprising a thin film transistor, a pixel electrode and a VIA connecting thin film transistor and pixel electrode; at least an auxiliary hole formed by same EPD etching as VIA being disposed between pixel units or in each pixel unit. The present invention can amplify the detection voltage, which enables monitoring VIA forming process more precisely and reliably to ensure the VIA manufacture quality.

Growing community of inventors

Shenzhen, China

Yangling Cheng