Chinese Academy of Sciences

Shanghai Lianxing Electronics Co., Ltd

Jiangsu Cas Igbt Technology Co., Ltd.

Jiangsu R&d Center for Internet of Things

Yangjun Zhu

Bo Wang

Xiaoli Tian

Shuojin Lu

Zhenxing Wu

Wenliang Zhang

Aibin Hu

Weili Chu

An ITC-IGBT and a manufacturing method therefor. The method comprises: providing a heavily doped substrate, forming a GeSi/Si multi-quantum well strained super lattice layer on the surface of the heavily doped substrate, and forming a lightly doped layer on the surface of the GeSi/Si multi-quantum well strained super lattice layer. The GeSi/Si multi-quantum well strained super lattice layer is formed on the surface of the heavily doped substrate through one step, simplifying the production process of the ITC-IGBT.

ITC-IGBT and manufacturing method therefor

A TI-IGBT, comprising a first semiconductor substrate, a second semiconductor substrate, and a first doped layer; a short circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate; the short circuit region and the collector region have different doping types; the second semiconductor substrate is located on the upper surface of the first semiconductor substrate, and has the same doping type with the short circuit region; the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and covers at least the collector region; the first doped layer has the same doping type with the second semiconductor substrate, and has a doping concentration smaller than that of the second semiconductor substrate.

Method of formation of a TI-IGBT

Growing community of inventors

Beijing, China

Yangjun Zhu