Zhuzhou Crrc Times Semiconductor Co. Ltd.

Yangang Wang

Xiaoping Dai

Yafei Wang

Chengzhan Li

A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region () located above a first conductivity type substrate (). A main trench is provided in the surface of the first conductivity type drift region (); a Schottky metal () is provided on the bottom and sidewalls of the main trench; a second conductivity type well region () is provided in the surface of the first conductivity type drift region () and around the main trench; a source region () is provided in the surface of the well region (); a source metal () is provided above the source region (); a gate insulating layer () and a gate () split into two parts are provided above the sides of the source region (), the well region (), and the first conductivity type drift region () close to the main trench.

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Hunan, China

Yangang Wang