Semiconductor Manufacturing International (shanghai) Corporation

Basf Se Corporation

Future Wei Technologies, Inc.

Kla Corporation

Northwest Instrument Inc.

Shanghai Hingwah Honeycomb Technology Development Co., Ltd.

Yang Zhou

Jun Wang

Shankar Krishnan

David Y Wang

Gangning Wang

Walter H Johnson, Iii

Guangli Yang

Lansheng Dong

Haijing Peng

GuoHao Cao

Hai-Yang You

Rui Ni

Chunxia Li

Changfei Yan

Alan Gatherer

Fang Yu

Wei Han

Xin Shi

David Xing

Jianou Shi

Alex Elisa Chandra

Peter Yan

Xiaotao Chen

Zhuolei Wang

Ywhpyng Harn

Dong Zhou

Yaolei Zheng

Xingfeng Chen

Alex Zheng

Mingyu Zhang

Weiqing Li

Joe Gu

Xingang Wang

Diao Qing

A method for trajectory processing includes: displaying, on a graphical user interface, a plurality of trajectory diagrams of multiple spaces, wherein each space corresponds to at least one of the trajectory diagrams; determining a target space on the graphical user interface, wherein a perimeter of the target space being formed by boundaries of two or more spaces of the multiple spaces; determining attribute information of the two or more spaces, wherein the attribute information of a space includes at least an area of the space calculated based on one or more of the trajectory diagrams that correspond to the space; and determining an area of the target space based on the areas of the two or more spaces.

Trajectory processing method and apparatus

A Cassegrain or quasi-Cassegrain structure objective lens is used in a polar MOKE metrology system. The quasi-Cassegrain reflective objective lens includes a primary concave mirror and a secondary mirror. The primary concave mirror has a wider diameter than the secondary mirror and defines an aperture through which the laser beam is configured to be transmitted toward the secondary mirror. The secondary mirror can be convex, concave, or have a flat surface.

Reflective compact lens for magneto-optic Kerr effect metrology system

A laser beam is directed through a transmissive axicon telescope or a reflective axicon telescope such as in a magneto-optic Kerr effect metrology system. With the transmissive axicon telescope, a Gaussian beam profile is directed through a first axicon lens and a second axicon lens. The first axicon lens and second axicon lens transfer the Gaussian beam profile of the laser beam to a hollowed laser ring. The laser beam with a hollowed laser ring can be directed through a Schwarzschild reflective objective. With the reflective axicon telescope, the laser beam is directed through two conical mirrors that are fully reflective. One of the conical mirrors defines a central hole that the laser beam passes through.

Magneto-optic Kerr effect metrology systems

The invention discloses an extension structure with expandable space, comprising: a vehicle body, a lower end face of the vehicle body is provided with a plurality of hydraulic support legs; four horizontal rods, the lower side of each opening is provided with two horizontal rods; the four horizontal rods are of telescopic structures, and are folded on two sides of the vehicle body; two top plates, two bottom plates, two extension side walls, each extension side wall comprising: a first side wall plate, a second side wall plate and a third side wall plate, wherein two side edges of the first side wall plate are hinged to one side edge of the second side wall plate and one side edge of the third side wall plate, respectively, and the other side edge of the second side wall plate and the other side edge of the third side wall plate are hinged to two sides of the openings, respectively. By adopting the extension structure with expandable space as illustrated in the invention, space available for use can be expanded effectively, and the demand on the functions of folding and expanding the space for practical use are fully met, that is to say, extra space is not occupied in a folded state, and after being positioned, mounted and expanded, the extension structure can meet a relatively high demand for living function, and can be used repeatedly.

Extension structure with expandable space

The present invention relates to a process for producing an insulation component in which an insulating foam material is placed in a mold and in which (a) isocyanates, (b) polymeric compound having hydrogen atoms reactive towards isocyanate, (c) chain extenders and/or crosslinkers, and (d) catalysts are mixed to give a reaction mixture and the reaction mixture is injected into the mold and cured to form a seamless outer material enclosing the insulating foam wherein the average functionality of the polyols (b) and the chain extenders and/or crosslinkers (c) and the isocyanates (a) is greater than 2.2. The invention further relates to an insulation component obtainable by such a process and a door or wall component for cold storage that is made from that insulation component.

Polyurethane compound for producing an integrated insulation component

A described embodiment of the present invention includes a network having a first, second and third plurality of routers connected to a plurality of endpoints. At least one of the first plurality of routers includes a plurality of interposers having a number of queues. The at least one of the first plurality of routers has a demultiplexer for each interposer configured to receive multiplexed data from the interposer and provide demultiplexed data on to a plurality of second queues corresponding to the first queues of the number of queues. The at least one of the first plurality of routers also includes a number multiplexers, each of the number multiplexers having inputs configured to receive data from the number of queues.

Non-blocking network

A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a predetermined interval on a surface of a semiconductor substrate, forming spacers on sidewalls of the gate electrodes, depositing an interconnection layer conformally on the surface of the semiconductor substrate over the gate electrodes and the spacers, selectively etching the interconnection layer, wherein at least a portion of the interconnection layer that is formed on the surface of the semiconductor substrate and sidewalls of the spacers and located between adjacent gate electrodes remains after the selective etch, and forming an electrical contact on the etched interconnection layer located between the adjacent gate electrodes.

Semiconductor device and method of fabricating same

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Shanghai, China

Yang Zhou