Hefei Core Storage Electronic Limited

Hefei Dappworks Technology Co., Ltd.

Yang Zhang

Qi-Ao Zhu

Wan-Jun Hong

Chih-Ling Wang

Xin Wang

Jing Zhang

Xu Hui Cheng

Yi Shi

Jian Hu

Mengkai Wu

Hao Yang

Yankai Dai

Wenbin Tao

A memory operation control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes the following. Management data is established, which includes status recording data. First status information corresponding to a first physical unit is stored in the status recording data. An operation command is received from a host system. The management data is queried according to the operation command. Whether to allow an execution of the operation command on the first physical unit is determined according to a query result.

Memory operation control method, memory storage device and memory control circuit unit

A method for transacting a resource flow is provided. The method is applied to a blockchain server, and includes: acquiring initial transaction information for associating a requester client with a provider client, and sending the initial transaction information to other blockchain servers, to store the initial transaction information in respective corresponding blockchain database; acquiring certificate information indicative of a status of a resource flow usage of the requester client; and determining a first value indicative of a value added by the requester client to an account of the provider client based on the initial transaction information and the certificate information, and sending the first value to the other blockchain servers. An apparatus for transacting a resource flow, a computer equipment, and a computer-readable medium are further provided.

Method and apparatus for transacting resource flow

A table management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: storing multiple table groups, wherein each of the table groups includes multiple voltage management tables; detecting a status of the memory storage device; determining one of the table groups as a target table group according to the status of the memory storage device, wherein the target table group includes multiple target voltage management tables; reading data from a rewritable non-volatile memory module by using at least one read voltage level according to at least one of the target voltage management tables.

Table management method, memory storage device and memory control circuit unit

A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: performing a first write operation to store first data to a first physical unit; recording first unit management information corresponding to the first write operation, wherein the first unit management information reflects a usage order of first used physical units, and the first used physical units include the first physical unit; performing data merge operation to copy at least a part of data stored in the first physical unit to a second physical unit; and after the data merge operation is performed, recording second unit management information according to the first unit management information, wherein the second unit management information reflects a usage order of second used physical units. The second used physical units include the second physical unit but do not include the first physical unit.

Method for recording unit management information, memory storage device and memory control circuit unit

A multi-channel memory storage device, a memory control circuit unit, and a data reading method are provided. The method includes: determining whether a storage space of a buffer memory is insufficient when a multi-channel access is performed; issuing a data read command corresponding to each of a plurality of multi-channels to a rewritable non-volatile memory module according to a logical address in a host read command in response to insufficient storage space of the buffer memory to read data corresponding to each of the plurality of multi-channels from a data storage area to a data cache area via the plurality of multi-channels; and allocating the storage space of the buffer memory to the rewritable non-volatile memory module after the storage space of the buffer memory is released and issuing a cache read command to move first data in data temporarily stored in the data cache area to the buffer memory.

Multi-channel memory storage device, memory control circuit unit and data reading method

Growing community of inventors

Anhui, China

Yang Zhang