University of California

Precision Dynamics Corporation

Other

U.S. Philips Corporation

Industrial Technology Research Institute

The Johns Hopkins University

Rohm and Haas Company

Beijing Bytedance Network Technology Co., Ltd.

Fuji Electric Holdings Co., Ltd.

Yang Yang

Liping Ma

Letian Dou

Rui Zhu

Michael L Beigel

Huanping Zhou

Jianyong Ouyang

Richard Barry Kaner

Charles R Szmanda

Bao Lei

Qi Chen

Jing-Bi You

Choong-Heui Chung

Shenghan Li

Gang Li

Qibing Pei

Haruo Kawakami

Sayeef Salahuddin

Je-Ping Hu

Jun He

Chao-Feng Sung

Petrus J Peters

Jeffrey Bokor

Tze-bin Song

Jie Liu

Fangfei Chen

Jeroen J Vleggaar

Matthew J Allen

Chun Chao Chen

Chenjun Shi

Jianhui Hou

Jinsong Huang

Hsing-En Elbert Wu

Brion P Bob

Qingkun Li

Wei-Hsuan Chang

Jonathan Yang

Wenbing Yang

You Seung Rim

Marcus G Van Munster

Jon Gorchon

Wan-Ching Hsu

Jingbi You

Richard Brian Wilson

Charles Henri Alexandre Lambert

Mi-Haye Park

Lei Meng

Wei-Jen Hou

Chun-Chih Tung

Systems and method directed to providing a framework for a trustworthy and security compliant edge computing infrastructure are described. Such framework allows self-built edge datacenters to continue providing enhanced service quality in regions where user data and user privacy are of top concerns. In examples, the systems and methods may include an edge router configured to route a communication received from a mobile device to a network address translation appliance, the network address translation appliance associates an anonymous internet protocol address with an internet protocol address associated with the mobile device, and provides the request to an edge datacenter. The edge data center may request content and/or services from a technology partner datacenter via an application gateway for security and privacy that is configured to receive the request for content from the edge datacenter and determine if the request for content is associated with user protected information.

Solution for trustworthy and security compliant edge computing infrastructure

According to some embodiments of the present invention, a method of producing an organic-inorganic perovskite thin film includes depositing a layer of inorganic material on a substrate to form an inorganic film, and performing an organic vapor treatment of the inorganic film to produce an organic-inorganic perovskite thin film. The layer of inorganic material comprises an inorganic anion layer having a metal-ligand framework, and the organic vapor treatment provides organic cations capable of becoming inserted into the metal-ligand framework of the inorganic anion layer to form a perovskite structure.

Sequential processing with vapor treatment of thin films of organic-inorganic perovskite materials

An opto-electronic device includes a first electrode, a first buffer layer formed on the first electrode, and a perovskite semiconductor active layer formed on the first buffer layer. The opto-electronic device further includes a second buffer layer formed on the perovskite semiconductor active layer, and a second electrode formed on the second buffer layer. The first buffer layer, the second buffer layer, and the perovskite semiconductor active layer each consists essentially of inorganic materials.

Efficient and stable perovskite solar cells with all solution processed metal oxide transporting layers

Electrochemical and bio sensors using metal oxide semiconductors and method of making the same are described herein. The sensor includes a gate electrode, a dielectric layer over the gate electrode, a channel layer over the dielectric layer, and source and drain electrodes formed on the channel layer to provide a field effect transistor structure. The channel layer is a metal oxide semiconductor film that has a substantially uniform thickness of at least 3 nm thick and less than 10 nm thick. The metal oxide semiconductor film is functionalized with molecules attached thereto that are open to make contact with a fluid for detection of at least one component or at least one physical or chemical property of the fluid.

High performance chemical and bio sensors using metal oxide semiconductors

Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.

Writing of a magnetic memory with electric pulses

Tandem electro-optic devices and active materials for electro-optic devices are disclosed. Tandem devices include p-type and n-type layers between the active layers, which are doped to achieve carrier tunneling. Low bandgap conjugated polymers are also disclosed.

Active materials for electro-optic devices and electro-optic devices

A metal-chalcogenide photovoltaic device includes a first electrode, a window layer spaced apart from the first electrode, and a photon-absorption layer between the first electrode and the window layer. The photon-absorption layer includes a metal-chalcogenide semiconductor. The window layer includes a layer of metal-oxide nanoparticles, and at least a portion of the window layer provides a second electrode that is substantially transparent to light within a range of operating wavelengths of the metal-chalcogenide photovoltaic device. A method of producing a metal-chalcogenide photovoltaic device includes providing a photovoltaic substructure, providing a solution of metal-oxide nanoparticles, and forming a window layer on the substructure using the solution of metal-oxide nanoparticles such that the window layer includes a layer of metal-oxide nanoparticles formed by a solution process.

Metal-chalcogenide photovoltaic device with metal-oxide nanoparticle window layer

A conjugated polymer for electronic devices can include a repeated unit having the structure of formula (I) 

Conjugated polymers for electronic devices

An electro-optic device includes a substructure, a layer of nanowires deposited on the substructure so as to form a network of nanowires having electrically connected junctions at overlapping nanowire portions and defining spaces void of the nanowires, and a plurality of electrically conducting and optically transparent nanoparticles disposed to at least partially fill a plurality of the spaces to provide additional electrically conducting pathways for the network of nanowires across the spaces. The network of nanowires and the plurality of electrically conducting and optically transparent nanoparticles form at least a portion of an optically transparent electrode of the electro-optic device.

Solution processed nanoparticle-nanowire composite film as a transparent conductor for opto-electronic devices

A solution for forming at least a portion of an active layer of an electronic or electro-optic device includes a solvent, an additive mixed with the solvent to provide a solvent-additive blend, and a solute that includes at least one of a transition metal, an alkali metal, an alkaline earth metal, Al, Ga, In, Ge, Sn, or Sb dissolved in elemental form in the solvent-additive blend. The additive is selected from the group of additives consisting of NR1R2NHCOOH, NH2N&#x2014;HCONHNH2, NH2COOH.NH3, NH2NHC(&#x2550;NH)NH2.H2CO3, NH2NHCSNHNH2, NH2NHCSSH and all combinations thereof. R1 and R2 are each independently selected from hydrogen, aryl, methyl, ethyl and a linear, branched or cyclic alkyl of 3-6 carbon atoms. Methods of producing the solution, a method of producing a Kesterite film on a substructure and devices made with the solutions and methods are also provided.

Inorganic solution and solution process for electronic and electro-optic devices

A method of producing an electro-optic device includes providing a substructure, depositing a network of nanowires on the substructure, depositing a sol-gel solution on the network of nanowires and the substructure, and removing solvent from the sol-gel solution to provide fusing material that causes junctions of nanowires within the network of nanowires to fuse together to reduce electrical sheet resistance of the network of nanowires. An electro-optic device includes a sub-structure, a network of nanowires deposited on the substructure, and a plurality of nanoparticles attached to the network of nanowires. The plurality of nanoparticles fuse junctions of overlapping nanowires together to reduce electrical sheet resistance of the network of nanowires.

Solution process for improved nanowire electrodes and devices that use the electrodes

An electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, an active layer disposed between the first electrode and the second electrode, and an interfacial layer in contact with the active layer. The interfacial layer is a blend of a metal oxide and a second material that at least one of reduces a work function or increases an electrical conductivity of the interfacial layer according to an embodiment of this invention. A composition for electro-optic devices is a blend of at least one metal oxide and at least one salt in a ratio, by volume, of at least 1:0.1 and less than 1:1.2.

Solution processable material for electronic and electro-optic applications

An electro-optic device includes a first electrode, a second electrode spaced apart from the first electrode, and an active layer of organic semiconducting material between the first electrode and the second electrode. The active layer includes a quasi-bilayer in which a first plurality molecules from a first layer of active material is interpenetrated by a second plurality of molecules from a second layer of active material formed on the first layer. The first and second pluralities of molecules provide donor-acceptor pairs such that the quasi-bilayer has at least a portion that is a bulk heterojunction active layer. Each of the first plurality of molecules has a long axis that is longer than corresponding transverse axes and the long axis is substantially aligned along a common direction such that the active layer is more sensitive to a first polarization of incident light than a second polarization of the incident light, wherein the first polarization and the second polarization are orthogonal polarization components of the light.

Polarizing photovoltaic devices and applications in LCD displays and tandem solar cells

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Los Angeles, CA, United States of America

Yang Yang