Qualcomm Incorporated

Applied Materials, Inc.

Apple Inc.

Wells Fargo Bank, N.a.

Intel Corporation

Canon Kabushiki Kaisha

Canon U.s.a., Inc.

Yahoo! Inc.

Nanyang Technological University

Rubrik, Inc.

Beijing Voyager Technology Co., Ltd.

Wd Media, LLC

Irm LLC

Canon Virginia, Inc.

Canon Information and Imaging Solutions, Inc.

Yang Yang

Kartik Ramaswamy

Jing Jiang

Tao Luo

Gabi Sarkis

Joseph Binamira Soriaga

Heechoon Lee

Jamie Menjay Lin

Wanshi Chen

Tingfang Ji

Peter Pui Lok Ang

Peter S Gaal

Jing X Sun

Alexandros Manolakos

Kenneth S Collins

June Namgoong

Hung Dinh Ly

Changlong Xu

Hari Sankar

Chao Wei

Ying Wang

Bilal Sadiq

Andrew Nguyen

Shahid Rauf

Amir Said

Makesh Pravin John Wilson

Wooseok Nam

Wei Jennifer Yang

Abhijit Basu Mallick

Jing Zhu

James D Carducci

Pramit Manna

Shrinivas Kudekar

Yi Huang

Krishna Kiran Mukkavilli

Alexei Yurievitch Gorokhov

John Edward Smee

Ludovic Godet

Jilei Hou

Jian Li

Rameshchandra Bhaskar Ketharaju

Rutger Meyer Timmerman Thijssen

Tza-Jing Gung

Nicolas J Bright

Sony Akkarakaran

Hao Xu

Muhammad Nazmul Islam

Renqiu Wang

Srinivas D Nemani

Sumeeth Nagaraja

Chong Li

Chih-Ping Li

Christopher G Lott

Yingyong Qi

Leonid Dorf

Michael D Willwerth

Richard Charles Fovell

Junyi Li

Juan Montojo

Yan Zhou

Wei Zeng

Haitong Sun

George Cherian

Huilin Xu

Xiao Feng Wang

Taesang Yoo

Simone Merlin

Sundar Subramanian

Youn Hyoung Heo

Jing Lei

Raghu Narayan Challa

Michael Robert Rice

Yujian Zhang

Markus Dominik Mueck

Richard Charles Burbidge

Gwendolyn Denise Barriac

Srinivas Gandikota

Yi Liu

Sudeep K Palat

Farhad Meshkati

Youmin Wang

Ning Bi

Saurabha Rangrao Tavildar

Honglei Miao

Douglas A Buchberger, Jr

Otman Adam Basir

Manu Gulati

Valentin Alexandru Gheorghiu

Praburam Gopalraja

Yue Lu

Wei Yang

Rahul Malik

Michael Faerber

Donald Karanewsky

Farhad K Moghadam

Lingkai Kong

Rudolph Van Der Merwe

Jie Yu

Chentsau Chris Ying

Rotem Cooper

A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.

Auxiliary plasma source for robust ignition and restrikes in a plasma chamber

Aspects described herein provide a method of performing phase selective convolution, including: receiving multi-phase pre-activation activation data; partitioning the multi-phase pre-activation data; applying a first activation function to the set of first phase pre-activation data to form a set of first phase activation output; convolving the set of first phase activation output with a first convolution kernel to form a first phase output feature map; negating the set of second phase activation data; applying a second activation function to the negated set of second phase pre-activation data to form a set of second phase activation output; convolving the set of second phase activation output with a second convolution kernel to form a second phase output feature map; negating the second phase output feature map; and training the neural network based on the first phase output feature map and the second phase output feature map.

Phase selective convolution with dynamic weight selection

Embodiments provided herein generally include apparatus, plasma processing systems and methods for controlling ion energy distribution in a processing chamber. One embodiment of the present disclosure is directed to a method for plasma processing. The method generally includes: determining a voltage and/or power associated with a bias signal to be applied to a first electrode of a processing chamber, the voltage being determined based on a pressure inside a processing region of the processing chamber such that the voltage is insufficient to generate a plasma inside the chamber by application of the voltage and/or power to the first electrode; applying the first bias signal in accordance with the determined voltage and/or power to the first electrode; and applying a second bias signal to a second electrode of the processing chamber, wherein the second bias signal is configured to generate a plasma in the processing region and the first bias is applied while the second bias is applied.

Ion energy control on electrodes in a plasma reactor

Various implementations disclosed herein include devices, systems, and methods that generate floorplans and measurements using a three-dimensional (3D) representation of a physical environment generated based on sensor data.

Floorplan generation based on room scanning

Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

Pulsed voltage source for plasma processing applications

Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

Plasma excitation with ion energy control

Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.

Substrate support gap pumping to prevent glow discharge and light-up

Embodiments of the disclosure provided herein include an apparatus and method for processing a substrate in a plasma processing system. The apparatus includes a pulse voltage (PV) waveform generator comprising at least one synchronization signal and a plurality of pulsers to provide a plurality of TTL inputs. The PV waveform generator generates a waveform containing pulses or bursts which contain micropulses corresponding to the plurality of TTL input signals and the at least one synchronization signal. The method includes receiving a first TTL input signal and a synchronization waveform signal from a controller, delivering a first micropulse to an electrode assembly after receiving the first TTL input signal and synchronization signal, and delivering a second micropulse to the electrode assembly after receiving the second TTL input signal and the synchronization signal.

System and methods for implementing a micro pulsing scheme using dual independent pulsers

In general, this disclosure describes techniques for generating and evaluating automatic transcripts of audio recordings containing human speech. In some examples, a computing system is configured to: generate transcripts of a plurality of audio recordings; determine an error rate for each transcript by comparing the transcript to a reference transcript of the audio recording; receive, for each transcript, a subjective ranking selected from a plurality of subjective rank categories; determine, based on the error rates and subjective rankings, objective rank categories defined by error-rate ranges; and assign an objective ranking to a new machine-generated transcript of a new audio recording, based on the objective rank categories and an error rate of the new machine-generated transcript.

Categorizing audio transcriptions

A method and apparatus for spatially switching radio frequency (RF) power from a single RF power generator to a selected one of two or more impedance matching networks coupled to associated RF electrodes for forming plasma in a plasma chamber. Full RF power may be switched within microseconds to the selected one of the two or more impedance matching networks. The two or more impedance matching networks may be coupled to one or more plasma generating electrodes. The two or more impedance matching networks may be interleaved during plasma processing recipe operation. Impedance matching networks can alternate back and forth during operation of a plasma processing recipe. This interleaving in operation and impedance transformation capabilities may also be performed with more than two impedance matching networks, and may be beneficial in enabling the use of fixed tuned impedance matching networks instead of requiring variable impedance matching networks having variable tuning capabilities.

Radio frequency diverter assembly enabling on-demand different spatial

A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.

Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics

Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first output node and electrical ground node. The waveform generator also includes a third switch coupled between the voltage source circuitry and a second output node of the waveform generator, the second output node being configured to be coupled to the chamber, and a fourth switch coupled between the second output node and the electrical ground node.

Voltage pulse time-domain multiplexing

Embodiments provided herein generally include apparatus, plasma processing systems, and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having three MOSFETs and three series-connected capacitors. The capacitors are connected across a DC power supply and, depending on the value of the capacitors, voltage across each of them may be varied. Each of the top two capacitors is followed by a diode. The bottom capacitor is connected to the ground. The drain terminal of each MOSFET is connected to higher potential end of the series connected capacitors. Each MOSFET is followed by a diode and the cathode ends of the diodes are connected together. An electrode is connected between the common cathode and ground.

Solid-state switch based high-speed pulser with plasma IEDF modification capability through multilevel output functionality

Systems, apparatuses, methods, and computer-readable media, are provided for offloading computationally intensive tasks from one computer device to another computer device taking into account, inter alia, energy consumption and latency budgets for both computation and communication. Embodiments may also exploit multiple radio access technologies (RATs) in order to find opportunities to offload computational tasks by taking into account, for example, network/RAT functionalities, processing, offloading coding/encoding mechanisms, and/or differentiating traffic between different RATs. Other embodiments may be described and/or claimed.

Application computation offloading for mobile edge computing

A storage cluster may dynamically select a data transport mode for supporting a backup or export job. The storage cluster may receive a trigger indication to create, a backup of data of a source virtual machine. The storage cluster may select a data transport mode to use for reading the data from the source virtual machine to create the backup at the storage cluster. The selection may be from a set of data transport modes that includes a proxy virtual machine mode and a direct-to-host mode. The storage cluster may transmit, to a host for the source virtual machine, a request to activate the selected data transport mode, and receive the data from the source virtual machine via the selected data transport mode. The storage cluster may use the data to create the backup.

Hybrid data transfer model for virtual machine backup and recovery

Growing community of inventors

San Diego, CA, United States of America

Yang Yang