Western Digital (fremont), Inc.

Yang Xiang

Zhigang Bai

Feng Q Liu

Ching-Huang Lu

Zhanjie Li

Yugang Wang

Tao Pan

Jinqiu Zhang

Yan Chen

Hai Sun

Peng Luo

Xianzhong Zeng

Xiaoyu Yang

Yi Wang

Yunhe Huang

Ling Wang

A magnetic write apparatus has a media-facing surface (MFS), a pole, a trailing shield, coil(s) and a write gap between the pole and trailing shield. The pole includes leading and trailing surfaces, a main portion having a first bevel and an additional portion having a second bevel and adjoining the main portion. The first bevel adjoins the MFS and is at a nonzero, acute first bevel angle from a direction perpendicular to the MFS. The second bevel is recessed from the MFS by not more than eighty nanometers, oriented at a second bevel angle from the direction and offset from the first bevel by a taper having a taper angle that is greater than the first bevel angle. The additional portion is at least ten nanometers and not more than sixty nanometers thick as measured from the first bevel.

Magnetic recording apparatus having a recessed additional pole segment

A magnetic transducer has air-bearing surface (ABS) and includes a main pole and at least one coil. The coil(s) energize the main pole. The main pole includes a yoke and a pole tip having an ABS-facing surface. The pole tip includes a sidewall having a radius of curvature and a chisel angle. The chisel angle is measured between a yoke direction perpendicular to the ABS and a tangent the sidewall. The chisel angle for the pole tip continuously increases in the yoke direction to a maximum a first distance from the ABS-facing surface in the yoke direction. The radius of curvature for the pole tip has a minimum radius of curvature a second distance from the ABS-facing surface in the yoke direction. The first distance is greater than the second distance.

Magnetic write pole having engineered radius of curvature and chisel angle profiles

A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.

Process for masking and removal of residue from complex shapes

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Fremont, CA, United States of America

Yang Xiang